Methods of manufacturing semiconductor devices and a semiconductor structure

Abstract

Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly suppress defect creation, e.g., decrease particle generation, during wafer fabrication processes. More specifically, the processes described significantly reduce flaking of a TaN film from edges or extreme edges (bevel) of the wafer by effectively increasing the adhesion properties of the TaN film on the wafer. The method increasing a mol percent of nitride with respect to a total tantalum plus nitride to 25% or greater during a barrier layer fabrication process.

What is claimed is: 
     
         1 . A structure comprising:
 a wafer having an edge and extreme edges; and   a trough and/or via formed within a dielectric on the wafer, wherein   the trough and/or via has a barrier of TaN (tantalum nitride) with a mol percentage of nitride (N) with respect to a total Ta plus N being from about 25% to 90%, and   the edge and extreme edges of the wafer have TaN deposited thereon with the mol percentage of N with respect to the total Ta plus N being from about 25% to 90%.   
     
     
         2 . The structure of  claim 1 , wherein the mol percentage of N with respect to the total Ta plus N is from about 30% to 35% at the edge and extreme edges of the wafer. 
     
     
         3 . The structure of  claim 1 , wherein the N leaks from a back side of the wafer to a surface of the wafer. 
     
     
         4 . The method of  claim 3 , wherein the mol percentage of the N is in a range of about 30% to 35%.