US2015140232A1PendingUtilityA1

Ultrahigh Vacuum Process For The Deposition Of Nanotubes And Nanowires

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Assignee: UNIV NEVADAPriority: Aug 13, 2007Filed: Jan 26, 2015Published: May 21, 2015
Est. expiryAug 13, 2027(~1.1 yrs left)· nominal 20-yr term from priority
C30B 23/00C23C 14/564C23C 14/022C30B 29/602C30B 29/60Y10S117/902C30B 29/403C30B 29/406
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Claims

Abstract

A system and method A method of growing an elongate nanoelement from a growth surface includes: (a) cleaning a growth surface on a base element; (b) providing an ultrahigh vacuum reaction environment over the cleaned growth surface; (c) generating a reactive gas of an atomic material to be used in forming the nanoelement; (d) projecting a stream of the reactive gas at the growth surface within the reactive environment while maintaining a vacuum of at most 1×10 −4 Pascal; (e) growing the elongate nanoelement from the growth surface within the environment while maintaining the pressure of step c); (f) after a desired length of nanoelement is attained within the environment, stopping direction of reactive gas into the environment; and (g) returning the environment to an ultrahigh vacuum condition.

Claims

exact text as granted — not AI-modified
1 .- 17 . (canceled) 
     
     
         18 . A system for growing an elongate nanoelement from a growth surface comprising:
 a support for a base element having a growth surface;   a chamber with gas flow controls to support an ultrahigh vacuum within the chamber, wherein the chamber supports an ultrahigh vacuum reaction environment of less than 10 −7  Torr over the growth surface within the chamber; and   a source of directed reactive gas of an atomic material, wherein the reactive gas comprises a cracked hydrocarbon species.   
     
     
         19 . The system of  claim 18 , wherein a stream of the reactive gas is projected at the growth surface within the reaction environment while maintaining a vacuum of at most 1×10 −4  Pascal while growing an elongate nanoelement. 
     
     
         20 . The system of  claim 18 , wherein the chamber comprises an inner wall wherein the inner wall is lined with a cooling panel. 
     
     
         21 . The system of  claim 20 , wherein the cooling panel is a liquid nitrogen cooled cryopanel. 
     
     
         22 . The system of  claim 18 , wherein the chamber further comprises flanges for mounting a substrate holder, in-situ monitoring tools and compatible sources for generating reactive gaseous species. 
     
     
         23 . The system of  claim 22 , wherein the substrate holder is capable of continuous azimuthal rotation around its axis. 
     
     
         24 . The system of  claim 22 , wherein the in-situ monitoring tools are selected from the group consisting of Reflectance High Energy Electron Diffraction, Auger Electron Spectroscopy and Quadruple Mass Spectrometry. 
     
     
         25 . The system of  claim 22 , wherein the compatible sources can be effusion cells or radio frequency plasma sources. 
     
     
         26 . The system of  claim 20 , further comprising a heater element.

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