Combinatorial Plasma Enhanced Deposition Techniques

Abstract

Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.

What is claimed: 
     
         1 . A system for combinatorial processing of a plurality of discrete regions on a substrate, the system comprising:
 a chamber,   a support pedestal disposed within the chamber,
 wherein the support pedestal comprises a first portion and a second portion, 
 wherein the plurality of discrete regions comprise a first region and a second region, 
 wherein the first portion of the support pedestal corresponds to the first region of the plurality of discrete regions on the substrate, and 
 wherein the second portion of the support pedestal corresponds to the second region of the plurality of discrete regions on the substrate; 
   a segmented showerhead disposed within the chamber and above the support pedestal,
 wherein the segmented showerhead comprises comprising a first segment, a second segment isolated from the first segment, a first port extending to the first segment, and a second port extending to the second segment, 
 wherein the first segment is positioned over the first portion of the support pedestal, 
 wherein the second segment is positioned over the second portion of the support pedestal, 
 wherein the first port is configured to couple to a first gas supply, and 
 wherein the second port is configured to couple to a second gas supply; and 
   a plasma generator coupled to at least one of the support pedestal, the segmented showerhead, the first gas supply, or the second gas supply such that a first plasma between the first segment of the segmented showerhead and the first portion of the support pedestal and a second plasma the second segment of the segmented showerhead and the second portion of the support pedestal is controlled independently.   
     
     
         2 . The system of  claim 1 , wherein the segmented showerhead comprises a protrusion extending toward the support pedestal, and wherein the protrusion extends between the first segment and the second segment. 
     
     
         3 . The system of  claim 1 , wherein the segmented showerhead comprises a baffle plate and a manifold portion, the manifold portion comprising a body extending toward the baffle plate and separating the first segment and the second segment. 
     
     
         4 . The system of  claim 3 , wherein the body of the manifold portion extends through a center axis of the segmented showerhead. 
     
     
         5 . The system of  claim 3 , wherein the body provides fluid separation within the segmented showerhead between the first segment and the second segment. 
     
     
         6 . The system of  claim 1 , wherein the system is a plasma-enhanced chemical vapor deposition system. 
     
     
         7 . The system of  claim 1 , wherein the system is a plasma-enhanced atomic layer deposition system. 
     
     
         8 . The system of  claim 1 , wherein the plasma generator is a remote plasma source. 
     
     
         9 . The system of  claim 8 , wherein the plasma generator is independently coupled to the first gas supply and to the second gas supply. 
     
     
         10 . The system of  claim 1 , wherein the plasma generator is coupled to the support pedestal while the segmented showerhead is coupled to a ground. 
     
     
         11 . The system of  claim 1 , wherein the plasma generator is coupled to the segmented showerhead while the support pedestal is coupled to a ground. 
     
     
         12 . The system of  claim 1 , wherein the plasma generator is coupled to the segmented showerhead and to the support pedestal. 
     
     
         13 . The system of  claim 1 , wherein a distance between the first segment of the segmented showerhead and the support pedestal is different from a distance between the second segment of the segmented showerhead and the support pedestal. 
     
     
         14 . The system of  claim 1 , wherein a difference between a distance between the first segment of the segmented showerhead and the support pedestal is different and a distance between the second segment of the segmented showerhead and the support pedestal is dynamically adjustable. 
     
     
         15 . The system of  claim 14 , wherein the first gas supply is same as the second gas supply. 
     
     
         16 . The system of  claim 1 , further comprising a heater-lift assembly connected to the support pedestal, wherein the heater-lift assembly is configured to control a distance between the support pedestal and the segmented showerhead and to control a temperature of the support pedestal. 
     
     
         17 . The system of  claim 16 , wherein the heater-lift assembly is configured to control a temperature of the first portion of the support pedestal independently from a temperature of the second portion of the support pedestal. 
     
     
         18 . The system of  claim 1 , further comprising a controller for independently controlling fluid supply from the first gas supply to the first port of the segmented showerhead and fluid supply from the second gas supply to the second port of the segmented showerhead. 
     
     
         19 . The system of  claim 1 , wherein the first gas supply is different from the second gas supply. 
     
     
         20 . The system of  claim 1 , wherein the support pedestal is rotatable with respect to the segmented showerhead.