Methods of forming an e-fuse for an integrated circuit product and the resulting integrated circuit product

Abstract

An integrated circuit product is disclosed that includes a resistor body and an e-fuse body positioned on a contact level dielectric material, wherein the resistor body and the e-fuse body are made of the same conductive material, a first plurality of conductive contact structures are coupled to the resistor body, conductive anode and cathode structures are conductively coupled to the e-fuse body, wherein the first plurality of conductive contact structures and the conductive anode and cathode structures are made of the same materials.

1 . An integrated circuit product, comprising:
 a contact level dielectric material positioned above a semiconductor substrate;   a resistor body positioned on said contact level dielectric material;   an e-fuse body positioned on said contact level dielectric material, wherein said resistor body and said e-fuse body are made of the same material;   at least one layer of insulating material positioned above said contact level dielectric material, said resistor body and said e-fuse body;   a first plurality of conductive contact structures positioned in said at least one layer of insulating material, each of said first plurality of conductive contact structures being conductively coupled to said resistor body;   a conductive anode structure positioned in said at least one layer of insulating material, said conductive anode structure being conductively coupled to said e-fuse body; and   a conductive cathode structure positioned in said at least one layer of insulating material, said conductive cathode structure being conductively coupled to said e-fuse body, wherein said first plurality of conductive contact structures, said conductive anode structure and said conductive cathode structure are all comprised of the same materials.   
     
     
         2 . The integrated circuit product of  claim 1 , wherein said resistor body and said e-fuse body are comprised of a metal silicide material. 
     
     
         3 . The integrated circuit product of  claim 1 , wherein said resistor body and said e-fuse body are made of tungsten silicide. 
     
     
         4 . The integrated circuit product of  claim 1 , wherein said first plurality of conductive contact structures, said conductive anode structure and said conductive cathode structure are comprised of one of tungsten or titanium silicide. 
     
     
         5 . The integrated circuit product of  claim 1 , wherein said conductive anode structure and said conductive cathode structure are conductive line-type features. 
     
     
         6 . The integrated circuit product of  claim 1 , wherein said conductive anode structure and said conductive cathode structure are each comprised of a plurality of discreet, conductive contact features. 
     
     
         7 . The integrated circuit product of  claim 1 , further comprising:
 a transistor formed in and above an active region defined in said substrate, said transistor comprising a conductive gate electrode and a plurality of source/drain regions formed in said active region;   a conductive source/drain contact that is conductively coupled to one of said source/drain regions; and   a conductive gate contact that is conductively coupled to said conductive gate electrode, wherein at least one of said conductive source/drain contact or said conductive gate contact is comprised of the same materials as said first plurality of conductive contact structures, said conductive anode structure and said conductive cathode structure.   
     
     
         8 . An integrated circuit product, comprising:
 a transistor formed in and above an active region defined in a semiconductor substrate, said transistor comprising a conductive gate electrode and a plurality of source/drain regions formed in said active region;   a contact level dielectric material positioned above said substrate and said source/drain regions of said transistor;   a resistor body positioned on said contact level dielectric material;   an e-fuse body positioned on said contact level dielectric material, wherein said resistor body and said e-fuse body are made of the same metal silicide material;   at least one layer of insulating material positioned above said contact level dielectric material, said resistor body and said e-fuse body;   a first plurality of conductive contact structures positioned in said at least one layer of insulating material, each of said first plurality of conductive contact structures being conductively coupled to said resistor body;   a conductive anode structure positioned in said at least one layer of insulating material, said conductive anode structure being conductively coupled to said e-fuse body;   a conductive cathode structure positioned in said at least one layer of insulating material, said conductive cathode structure being conductively coupled to said e-fuse body;   a conductive source/drain contact that is conductively coupled to one of said source/drain regions; and   a conductive gate contact that is conductively coupled to said conductive gate electrode, wherein said first plurality of conductive contact structures, said conductive anode structure, said conductive cathode structure and at least one of said conductive source/drain contact or said conductive gate contact are all comprised of the same materials.   
     
     
         9 . The integrated circuit product of  claim 8 , wherein said resistor body and said e-fuse body are made of tungsten silicide. 
     
     
         10 . The integrated circuit product of  claim 8 , wherein said first plurality of conductive contact structures, said conductive anode structure, said conductive cathode structure and said at least one of said conductive source/drain contact or said conductive gate contact are comprised of one of tungsten or titanium silicide. 
     
     
         11 . The integrated circuit product of  claim 8 , wherein said conductive anode structure and said conductive cathode structure are conductive line-type features. 
     
     
         12 . The integrated circuit product of  claim 8 , wherein said conductive anode structure and said conductive cathode structure are each comprised of a plurality of discreet, conductive contact features. 
     
     
         13 - 18 . (canceled)