Free-standing two-sided devices

Abstract

Devices having features deposited on two sides of a device substrate and methods for making the same. The devices are useful, for example, as the components in a macroelectronic system. In a preferred embodiment, the devices are photosensors having a plurality of electrodes patterned on a first side of the device and an electromagnetic interference filter patterned on a second side of the device. The method facilitates the fabrication of two-sided devices through the use of an immobilizing layer deposited on top of devices patterned on a first side of a device substrate; flipping the device substrate; processing the second side of the device substrate to produce patterned features on the second side of the device substrate; and releasing the devices having patterned elements on two sides of each device.

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows: 
     
         1 . A free-standing device comprising a substrate having a thickness dimension of less than about 50 microns, the substrate comprising:
 a first device side including a first electrode and a second electrode; and   a second device side including at least one processed feature disposed thereon;   wherein the second device side is opposite the first device side and in communication with the first device side.   
     
     
         2 . The device of  claim 1 , wherein the second electrode is annularly shaped around the first electrode. 
     
     
         3 . The device of  claim 2 , wherein the second electrode is a circle and the first electrode is disposed at the center of the circle formed by the second electrode. 
     
     
         4 . The device of  claim 1 , wherein the first electrode is disposed adjacent to a portion of the substrate having a first doping that is different from a bulk doping of the substrate. 
     
     
         5 . The device of  claim 1 , wherein the second electrode is disposed adjacent to a portion of the substrate having a first doping that is different from a bulk doping of the substrate. 
     
     
         6 . The device of  claim 1 , wherein the device is of a type selected from the group consisting of a transistor, a diode, a resistor, a light-emitting diode, and a photosensor. 
     
     
         7 . The device of  claim 1 , wherein the substrate comprises a material selected from the group consisting of a crystalline semiconductor, a polycrystalline semiconductors, an amorphous semiconductor, a glass, a polymer, a ceramics, and combinations thereof. 
     
     
         8 . The device of  claim 1 , wherein the communication is selected from the group consisting of optical and electronic. 
     
     
         9 . The device of  claim 1 , wherein the communication is through the substrate. 
     
     
         10 . A device substrate having a thickness dimension of less than about 50 microns, the device substrate comprising:
 a first device side including a plurality of devices disposed thereon; and   a second device side including at least one processed feature disposed thereon;   wherein the second device side is opposite the first device side, and wherein the at least one processed feature of the second device side is in communication with at least one of the plurality of devices of the first device side.   
     
     
         11 . The device substrate of  claim 10 , wherein the plurality of devices are of a type selected from the group consisting of a transistor, a diode, a resistor, a light-emitting diode, a photosensor, and combinations thereof. 
     
     
         12 . The device substrate of  claim 10 , wherein the plurality of devices are all of the same type. 
     
     
         13 . The device substrate of  claim 10 , wherein the substrate comprises a material selected from the group consisting of a crystalline semiconductor, a polycrystalline semiconductors, an amorphous semiconductor, a glass, a polymer, a ceramics, and combinations thereof. 
     
     
         14 . The device substrate of  claim 10 , wherein the communication is selected from the group consisting of optical and electronic 
     
     
         15 . The device substrate of  claim 10 , wherein the communication is through the device substrate. 
     
     
         16 . A free-standing light-emitting diode formed on a substrate having a thickness dimension of less than about 50 microns, the light-emitting diode comprising:
 a first device side comprising processed features including a first electrode and a second electrode, wherein the second electrode is annularly shaped around the first electrode; and   a second device side comprising including at least one processed feature disposed thereon;   wherein the second device side is opposite the first device side and in communication with the first device side.   
     
     
         17 . The free-standing light-emitting diode of  claim 16 , wherein the substrate comprises a material selected from the group consisting of a crystalline semiconductor, a polycrystalline semiconductors, an amorphous semiconductor, a glass, a polymer, a ceramics, and combinations thereof. 
     
     
         18 . The free-standing light-emitting diode of  claim 16 , wherein the communication is selected from the group consisting of optical and electronic. 
     
     
         19 . The free-standing light-emitting diode of  claim 16 , wherein the communication is through the substrate. 
     
     
         20 . The free-standing light-emitting diode of  claim 16 , wherein the second electrode is a circle and the first electrode is disposed at the center of the circle formed by the second electrode.