ELECTRONIC DEVICE MANUFACTURE USING LOW-k DIELECTRIC MATERIALS

Abstract

Materials and methods for manufacturing electronic devices and semiconductor components using low dielectric materials comprising polyimide based aerogels are described. Additional methods for manipulating the properties of the dielectric materials and affecting the overall dielectric property of the system are also provided.

What is claimed is: 
     
         1 . A low-k dielectric component suitable for an electronic device comprising: a substrate; a polyimide aerogel film coating at least a portion of the substrate; and a barrier layer coating at least a portion of the polyimide aerogel film away from the substrate; wherein the barrier layer comprises at least one non-porous, low-k dieletric material. 
     
     
         2 . The low-k dielectric component of  claim 1 , wherein the polyimide aerogel film has a density between about 0.05 and about 0.40 g/cc. 
     
     
         3 . The low-k dielectric component of  claim 1 , wherein the polyimide aerogel film has a dielectric constant between about 1.1 and about 2.0. 
     
     
         4 . The low-k dielectric component of  claim 1 , wherein the polyimide aerogel film has compression modulus between about 2000 psi and about 25000 psi. 
     
     
         5 . The low-k dielectric component of  claim 1 , wherein the polyimide aerogel film is formed from a pre-sol composition comprising: a polyamic acid pre-sol, a catalyst and a polar, aprotic solvent. 
     
     
         6 . The low-k dielectric component of  claim 5 , wherein the polyamic acid is obtained by admixing a dianhydride material and a diamine material. 
     
     
         7 . The low-k dielectric component of  claim 6 , wherein the dianhydride material comprises: 3,3′,4,4′-biphenyltetracarboxylic dianhydride; 2,3,3′,4′-biphenyltetracarboxylic anhydride; 2,3,3′,4′- or 3,3′,4,4′-biphenyltetracarboxylic anhydride; 2,3,3′,4′- or 3,3′,4,4′-biphenyltetracarboxylic anhydride; pyromellitic acid; 3,3′,4,4′-benzophenonetetracarboxylic acid; 2,2-bis(3,4-dicarboxyphenyl)propane; bis(3,4-dicarboxyphenyl)sulfone; bis(3,4dicarboxyphenyl)ether; bis(3,4-dicarboxyphenyl)thioether; or combinations thereof. 
     
     
         8 . The low-k dielectric component of  claim 6 , wherein the diamine material comprises: 4,4′-diaminodiphenylether; 3,3′-dimethyl-4,4′-diaminodiphenylether; 3,3′-diethoxy-4,4′-diaminodiphenylether; phenylenediamine; 2,6-diaminopyridine; 3,6-diaminopyridine; 2,5-diaminopyridine; 3,4-diaminopyridine; or combinations thereof. 
     
     
         9 . The low-k dielectric component of  claim 5 , wherein the pre-sol composition comprises a hybrid pre-sol, comprising:
 a) at least one tetra-, tri-, di- and/or mono- alkoxysilane which may optionally be partially hydrolyzed,   b) at least one bis-bi-, or trialkoxysilane diimide,   c) a selected amount of water, and   d) a gelation catalyst.   
     
     
         10 . The low-k dielectric component of  claim 1 , wherein the polyimide aerogel film is coated on the substrate in a pattern. 
     
     
         11 . The low-k dielectric component of  claim 1 , wherein the at least one non-porous, low-k dieletric material comprises glasses, siloxanes, silsesquioxanes, polyimides, poly(aryl esters), polycarbonates, poly(arylene ethers), polyimides, polyaromatic hydrocarbons, poly(perfluorinated hydrocarbons, polybenzoxazoles, parylenes, polycycloolefins, benzocyclobutenes, or combinations thereof. 
     
     
         12 . The low-k dielectric component of  claim 1 , wherein the barrier layer is coated onto the polyimide aerogel film by chemical vapor deposition, atomic layer deposition, physical vapor deposition, spin-on deposition, or combinations thereof. 
     
     
         13 . A low-k dielectric component suitable for an electronic device comprising: a substrate; a polyimide aerogel film coating at least a portion of the substrate; and at least one non-porous, low-k dieletric material coating at least a portion of the polyimide aerogel film away from the substrate. 
     
     
         14 . The low-k dielectric component of  claim 13 , wherein the polyimide aerogel film has a density between about 0.05 and about 0.40 g/cc. 
     
     
         15 . The low-k dielectric component of  claim 13 , wherein the polyimide aerogel film has a dielectric constant between about 1.1 and about 2.0. 
     
     
         16 . The low-k dielectric component of  claim 13 , wherein the polyimide aerogel film has compression modulus between about 2000 psi and about 25000 psi. 
     
     
         17 . The low-k dielectric component of  claim 13 , wherein the polyimide aerogel film is formed from a pre-sol composition comprising: a polyamic acid pre-sol, a catalyst and a polar, aprotic solvent. 
     
     
         18 . The low-k dielectric component of  claim 13 , wherein the polyimide aerogel film is coated on the substrate in a pattern. 
     
     
         19 . The low-k dielectric component of  claim 13 , wherein the at least one non-porous, low-k dieletric material comprises glasses, siloxanes, silsesquioxanes, polyimides, poly(aryl esters), polycarbonates, poly(arylene ethers), polyimides, polyaromatic hydrocarbons, poly(perfluorinated hydrocarbons, polybenzoxazoles, parylenes, polycycloolefins, benzocyclobutenes, or combinations thereof. 
     
     
         20 . The low-k dielectric component of  claim 13 , wherein the non-porous, low-k dieletric material is coated onto the polyimide aerogel film by chemical vapor deposition, atomic layer deposition, physical vapor deposition, spin-on deposition, or combinations thereof.