US2015160531A1PendingUtilityA1
Nanostructured Functional Coatings and Devices
Est. expiryJul 15, 2029(~3 yrs left)· nominal 20-yr term from priority
H10H 20/841H10F 77/315H10F 77/306H10F 77/70H10F 77/45H01L 33/46Y10S977/834B82Y 20/00G02F 1/3501H01L 31/02161G02F 1/3551G02F 1/353G02B 1/118G02B 1/02H01L 31/02168G02B 1/11Y02E10/52G02F 1/3505
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Claims
Abstract
In one aspect of the present invention, an article including a nanostructured functional coating disposed on a substrate is described. The functional coating is characterized by both anti-reflection properties and down-converting properties. Related optoelectronic devices are also described.
Claims
exact text as granted — not AI-modified1 . An article, comprising:
a nanostructured functional coating disposed on a substrate, wherein the coating is characterized by both anti-reflection properties and down-converting properties.
2 . The article of claim 1 , wherein the nanostructured functional coating comprises an anti-reflection layer.
3 . The article of claim 2 , wherein the anti-reflection layer comprises an array of nano structures.
4 . The article of claim 2 , wherein the anti-reflection layer has a uniform refractive index.
5 . The article of claim 2 , wherein the anti-reflection layer has a graded refractive index in a direction substantially perpendicular to the substrate.
6 . The article of claim 2 , wherein the anti-reflection layer comprises a lower region in contact with the substrate, and an upper region substantially opposite the lower region, and the refractive index of the array varies from a value, in the lower region, that substantially matches the refractive index of the substrate, to a higher value or a lower value, in a direction extending from the lower region to the upper region.
7 . The article of claim 2 , wherein the anti-reflection layer comprises a transparent conductive material.
8 . The article of claim 7 , wherein the transparent conductive material comprises a transparent conductive oxide, sulfide, phosphide, telluride, arsenide, nitride, or combination thereof.
9 . The article of claim 2 , wherein the anti-reflection layer comprises a transparent non-conductive crystalline material.
10 . The article of claim 2 , wherein the anti-reflection layer comprises a transparent non-conductive non-crystalline material.
11 . The article of claim 1 , wherein the nanostructured functional coating comprises a down-converting material.
12 . The article of claim 11 , wherein the down-converting material comprises a host and a dopant.
13 . The article of claim 12 , wherein the host comprises a material selected from the group consisting of oxides, sulfides, borates, phosphates, silicates, flourides and oxyflourides, nitrides and oxynitrides, halides or combinations thereof.
14 . The article of claim 12 , wherein the dopant comprises a rare-earth ion, a transition metal ion, or a lanthanide ion.
15 . The article of claim 11 , wherein the down-converting material is present in the form of nanostructures.
16 . The article of claim 15 , wherein the size of the nanostructures is in a range of from about 1 nanometer to about 500 nanometers.
17 . The article of claim 16 , wherein the size of the nanostructures is in a range of from about 10 nanometers to about 100 nanometers.
18 . The article of claim 15 , wherein the nano structured functional coating comprises an anti-reflection layer; and the nanostructures are embedded within the anti-reflection layer.
19 . The article of claim 15 , wherein the nano structured functional coating comprises an anti-reflection layer; and the nanostructures are disposed below the anti-reflection layer.
20 . The article of claim 3 , wherein the nanostructures in the anti-reflection layer are spaced from each other to form voids in the array of nanostructures, and down-converting nanostructures are located in substantially all of the voids of the array of nano structures.
21 . The article of claim 11 , wherein the down-converting material is present in crystalline form.
22 . The article of claim 21 , wherein the down-converting material comprises an array of nanostructures, each nanostructure having a substantially uniform cross-sectional area.
23 . The article of claim 21 , wherein the down-converting material comprises an array of nanostructures, each nanostructure having a graded cross-sectional area.
24 . An optoelectronic device, comprising:
a substrate; a multi-layer structure disposed on the substrate; and a nanostructured functional coating disposed on an electromagnetic radiation-receiving surface of the device, wherein the nanostructured functional coating is characterized by both anti-reflection properties and down-converting properties.
25 . The optoelectronic device of claim 24 , wherein the multi-layer structure comprises one selected from the group consisting of a PN-junction, a hetero-junction, a quantum well, and a superlattice.
26 . The optoelectronic device of claim 24 , in the form of a photovoltaic cell or a photovoltaic module.
27 . The optoelectronic device of claim 24 , in the form of a photodiode, a camera, a light emitting diode device, or a display.Join the waitlist — get patent alerts
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