Solid-state imaging device and method of manufacturing the same, and imaging apparatus

Abstract

A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.

What is claimed is: 
     
         1 . A solid-state imaging device including:
 a semiconductor substrate provided with an effective pixel region including a plurality of light receiving sections that photo-electrically convert incident light;   an interconnection layer that is provided at a plane side opposite to a light receiving plane of the semiconductor substrate;   a first groove portion that is provided between adjacent light receiving sections of the plurality of light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate;   and an insulating material made of silicon dioxide is embedded in at least a part of the first groove portion.   
     
     
         2 . The solid-state imaging device according to  claim 1 , further comprising: a high dielectric material film between the first groove portion and the insulating material. 
     
     
         3 . The solid-state imaging device according to  claim 2 , the high dielectric material film is made of a hafnium oxide. 
     
     
         4 . The solid-state imaging device according to  claim 1 , the first groove portion has a line width of 100 to 300 nm. 
     
     
         5 . The solid-state imaging device according to  claim 1 , further comprising: a second groove portion that is provided in an optical black region located at a periphery of the effective pixel region that is formed at a predetermined depth in the semiconductor substrate from the light receiving face. 
     
     
         6 . The solid-state imaging device according to  claim 5 , further comprising: an insulating material made of silicon dioxide is embedded in at least a part of the second groove portion. 
     
     
         7 . The solid-state imaging device according to  claim 6 , further comprising: a high dielectric material film between the second groove portion and the insulating material. 
     
     
         8 . The solid-state imaging device according to  claim 7 , the high dielectric material film is made of a hafnium oxide. 
     
     
         9 . The solid-state imaging device according to  claim 5 , the second groove portion has a line width of 100 to 300 nm.