Avoidance of glass bending in thermal processes

Abstract

The present invention relates to a multilayer body arrangement 1 for the prevention of glass substrate deformation, comprising at least: a glass substrate 30, a functional coating 10 , which is applied on one side of the glass substrate 30, an auxiliary layer 20 , which is connected over its entire area to the side of the glass substrate 30 facing away from the functional coating 10, at least one emitter array 4 with a radiated power P tot in the wavelength range from 250 nm to 4000 nm incident on the glass substrate 30 for heat-treating the functional coating 10, wherein the auxiliary layer 20 has an absorbed radiated power P 20 from 10% to 60% of the incident radiated power P tot .

1 . Multilayer body arrangement for the prevention of glass substrate deformation, comprising:
 a glass substrate,   a functional coating, which is applied on one side of the glass substrate,   an auxiliary layer, which is connected over its entire area to the side of the glass substrate facing away from the functional coating,   at least one emitter array with a radiated power P tot  in the wavelength range from 250 nm to 4000 nm incident on the glass substrate for heat-treating the functional coating,   wherein the auxiliary layer has an absorbed radiated power P 20  from 10% to 60% of the incident radiated power P tot .   
     
     
         2 . Multilayer body arrangement according to  claim 1 , wherein the auxiliary layer is applied on the glass substrate, preferably by vapor deposition, cathode sputtering, or electrochemical deposition. 
     
     
         3 . Multilayer body arrangement according to  claim 1 , wherein the auxiliary layer is releasably connected to the glass substrate. 
     
     
         4 . Multilayer body arrangement according to  claim 3 , wherein the auxiliary layer is applied on a carrier plate of a process box. 
     
     
         5 . Multilayer body arrangement according to  claim 1 , wherein the auxiliary layer has an absorbed radiated power P 20  from 10% to 40% and preferably from 20% to 30% of P tot . 
     
     
         6 . Multilayer body arrangement ( 1 ) according to  claim 1 , wherein the auxiliary layer has an absorbed radiated power P 20  from 50% to 150% of the radiated power P 10  absorbed in the functional coating. 
     
     
         7 . Multilayer body arrangement according to  claim 1 , wherein the auxiliary layer includes at least one layer made of graphite, silicon carbide, and/or boron nitride. 
     
     
         8 . Multilayer body arrangement according to  claim 1 , wherein the auxiliary layer includes an absorption layer disposed on the glass substrate and a protective layer disposed on the absorption layer. 
     
     
         9 . Multilayer body arrangement according to  claim 8 , wherein the absorption layer includes a metal or a metalloid compound and/or the protective layer contains silicon nitride, titanium nitride, molybdenum nitride, aluminum oxide, and/or aluminum nitride. 
     
     
         10 . Multilayer body arrangement according to  claim 1 , wherein the auxiliary layer has an adhesive layer between the glass substrate and the absorption layer. 
     
     
         11 . Multilayer body arrangement according to  claim 1 , wherein the functional coating includes precursor layers for conversion into a semiconductor layer of a thin-film solar cell. 
     
     
         12 . Multilayer body arrangement according to  claim 1 , wherein the functional coating includes at least one barrier layer an electrode, a precursor layer, and an additional precursor layer. 
     
     
         13 . Method for heat-treating with a multilayer body arrangement according to  claim 1 , wherein:
 a) a functional coating is applied on one side of a glass substrate, and the side of the glass substrate facing away from the functional coating is connected to an auxiliary layer,   b) the glass substrate is heated to a temperature of 470° C. to 600° C. by at least one emitter array with a radiated power P tot  in the wavelength range from 250 nm to 4000 nm incident on the glass substrate, wherein a radiated power P 20  von 10% to 60% of the incident radiated power P tot  is absorbed by the auxiliary layer, and,   c) the glass substrate is cooled to a temperature of <470° C.   
     
     
         14 . Method according to  claim 13 , wherein the auxiliary layer is applied on the glass substrate by vapor deposition, cathode ray sputtering, and/or chemical gas phase deposition. 
     
     
         15 . (canceled) 
     
     
         16 . Multilayer body arrangement according to  claim 4 , wherein the carrier plate is a base plate or a cover plate of a process box. 
     
     
         17 . Multilayer body arrangement according to  claim 7 , wherein the at least one layer has a layer thickness of 10 nm to 10 μm. 
     
     
         18 . Multilayer body arrangement according to  claim 9 , wherein the metal is aluminum, molybdenum, copper, cobalt, nickel, titanium, and/or tantalum. 
     
     
         19 . Multilayer body arrangement according to  claim 9 , wherein the metalloid compound is silicon carbide, zinc oxide, cadmium sulfide, cadmium telluride, indium antimonide, indium arsenide, and/or zinc antimonide. 
     
     
         20 . Multilayer body arrangement according to  claim 10 , wherein the adhesive layer includes silicon nitride and/or silicon oxynitride. 
     
     
         21 . Multilayer body arrangement according to  claim 11 , wherein the precursor layers are made of copper, indium, gallium, sulfur, and/or selenium.