Method and system of providing dopant concentration control in different layers of a semiconductor device

Abstract

A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.

1 - 26 . (canceled) 
     
     
         27 . A system comprising:
 a first chamber configured to house a deposition material which includes a dopant;   a second chamber in fluid communication with said first chamber for depositing a vapor which includes said deposition material and said dopant onto a substrate;   a first reactant inlet in fluid communication with at least one of said first and second chambers for receiving a reacting agent which reacts with said deposition material and dopant and affects the amount of dopant deposited with said deposition material on said substrate; and   a first controller in fluid communication with said first reactant inlet for adjusting fluid flow through said first reactant inlet to control the amount of dopant incorporated in the deposition material which is deposited on the substrate.   
     
     
         28 . The system of  claim 27 , wherein said first reactant inlet is in fluid communication with said second chamber, and wherein said reacting agent reacts with said deposition material and dopant in said second chamber. 
     
     
         29 . The system of  claim 28 , wherein said second chamber houses said first chamber. 
     
     
         30 . The system of  claim 27 , wherein said first reactant inlet is in fluid communication with said first chamber, and wherein said reacting agent reacts with said deposition material and dopant in said first chamber. 
     
     
         31 . The system of  claim 30 , further comprising:
 a second reactant inlet in fluid communication with said second chamber; and   a second controller in fluid communication with said second reactant inlet for adjusting fluid flow through said second reactant inlet to control the amount of said dopant incorporated in said deposition material which is deposited on said substrate.   
     
     
         32 . The system of  claim 27 , wherein said reacting agent comprises an oxidizing agent. 
     
     
         33 . The system of  claim 32 , wherein said oxidizing agent comprises oxygen gas. 
     
     
         34 . The system of  claim 32 , wherein said oxidizing agent comprises water vapor. 
     
     
         35 . The system of  claim 27 , wherein said dopant comprises silicon. 
     
     
         36 . The system of  claim 27 , wherein said dopant comprises germanium. 
     
     
         37 . The system of  claim 35 , wherein said deposited material has a silicon concentration in the range of about 0.0001% to about 5%. 
     
     
         38 . The system of  claim 27 , wherein said deposition material comprises one of copper-indium-gallium-diselenide (CIGS), cadmium sulfide, cadmium telluride, cadmium selenide, zinc telluride, zinc sulfide, zinc selenide, and any pseudo-binary or ternary compounds thereof. 
     
     
         39 . The system of  claim 27 , wherein said deposition comprises one of vapor transport deposition, close-space sublimation, sputtering, pulse laser deposition, and chemical vapor deposition. 
     
     
         40 . A system comprising:
 a first chamber configured to house a deposition material which includes a dopant;   a second chamber in fluid communication with said first chamber for depositing a vapor which includes said deposition material and said dopant onto a substrate;   a first reactant inlet in fluid communication with at least one of said first and second chambers for receiving a reacting agent which reacts with said deposition material and dopant and affects the amount of dopant deposited with said deposition material on said substrate; and   a first controller in fluid communication with said first reactant inlet for adjusting fluid flow through said first reactant inlet to control the amount of dopant incorporated in the deposition material which is deposited on the substrate,   wherein said reacting agent comprises an oxidizing agent.   
     
     
         41 . The system of  claim 40 , wherein said oxidizing agent comprises oxygen gas. 
     
     
         42 . The system of  claim 40 , wherein said oxidizing agent comprises water vapor. 
     
     
         43 . The system of  claim 40 , further comprising:
 a second reactant inlet in fluid communication with said second chamber; and   a second controller in fluid communication with said second reactant inlet for adjusting fluid flow through said second reactant inlet to control the amount of said dopant incorporated in said deposition material which is deposited on said substrate.   
     
     
         44 . The system of  claim 40 , wherein said deposited material has a silicon concentration in the range of about 0.0001% to about 5%. 
     
     
         45 . The system of  claim 40 , wherein said deposition comprises at least one of vapor transport deposition, close-space sublimation, sputtering, pulse laser deposition, and chemical vapor deposition. 
     
     
         46 . A system comprising:
 a first chamber configured to house a deposition material which includes a dopant;   a second chamber in fluid communication with said first chamber for depositing a vapor which includes said deposition material and said dopant onto a substrate;   a first reactant inlet in fluid communication with at least one of said first and second chambers for receiving a reacting agent which reacts with said deposition material and dopant and affects the amount of dopant deposited with said deposition material on said substrate; and   a first controller in fluid communication with said first reactant inlet for adjusting fluid flow through said first reactant inlet to control the amount of dopant incorporated in the deposition material which is deposited on the substrate,   wherein said reacting agent reacting with said deposition material and said dopant comprises at least one chemical reaction selected from the group consisting of:   SiTex(g)+O2(g)→SiO2(s)+x/2Te2(g);   SiSx(g)+O2(g)→SiO2(s)+xS(g);   SiSx(g)+O2(g)→SiO2(s)+SO2(g); and   SiSex(g)+O2(g)→SiO2(s)+x/2Se2(g).