Stackable multi-port gas nozzles

Abstract

One embodiment provides a reactor for material deposition. The reactor includes a chamber and at least one gas nozzle. The chamber includes a pair of susceptors, each having a front side and a back side. The front side mounts a number of substrates. The susceptors are positioned vertically so that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates mounted on different susceptors. The gas nozzle includes a gas-inlet component situated in the center and a detachable gas-outlet component stacked around the gas-inlet component. The gas-inlet component includes at least one opening coupled to the chamber, and is configured to inject precursor gases into the chamber. The detachable gas-outlet component includes at least one opening coupled to the chamber, and is configured to output exhaust gases from the chamber.

What is claimed is: 
     
         1 . A gas nozzle system for depositing material in a reactor chamber, comprising:
 a gas-inlet component whose inner walls form a first enclosed space that opens to the reactor chamber; and   a gas-outlet component positioned around and substantially enclosing the gas-inlet component, wherein inner walls of the gas-outlet component and outer walls of the gas-inlet component form a second enclosed space that opens to the reactor chamber.   
     
     
         2 . The gas nozzle system of  claim 1 , further comprising a second gas-inlet component positioned around and substantially enclosing the gas-outlet component, wherein inner walls of the second gas-inlet component and outer walls of the gas-outlet component form a third enclosed space that opens to the reactor chamber, and wherein the third enclosed space is configured to inject purge gas into the reactor chamber. 
     
     
         3 . The gas nozzle system of  claim 2 , wherein the purge gas is injected into a space between walls of the reactor chamber and susceptors positioned inside the reactor chamber, thereby reducing deposition on the walls of the reactor chamber. 
     
     
         4 . The gas nozzle system of  claim 1 , wherein the first enclosed space formed by the inner walls of gas-inlet component is substantially aligned to a narrow channel that is formed by susceptors positioned within the reactor chamber, thereby allowing precursor gas to be injected into the narrow channel. 
     
     
         5 . The gas nozzle system of  claim 1 , wherein the second enclosed space is configured to output exhaust gas from the reactor chamber. 
     
     
         6 . The gas nozzle system of  claim 1 , wherein at least one component is made of a material that comprises quartz. 
     
     
         7 . A reactor for material deposition, comprising:
 a chamber that accommodates at least two susceptors positioned inside the chamber, wherein the susceptors are positioned vertically in such a way that a substantially enclosed narrow channel is formed between the susceptors; and   at least one gas nozzle system coupled to the chamber, wherein the gas nozzle system comprises:
 a gas-inlet component whose inner walls form a first enclosed space that opens to the chamber; and 
 a gas-outlet component positioned around and substantially enclosing the gas-inlet component, wherein inner walls of the gas-outlet component and outer walls of the gas-inlet component form a second enclosed space that opens to the chamber. 
   
     
     
         8 . The reactor of  claim 7 , wherein the susceptors are formed using a material that comprises at least one of: SiC-coated graphite and monolithic SiC. 
     
     
         9 . The reactor of  claim 7 , wherein each suspector has a front side and a back side with the front side configured to mount a number of wafers, wherein a cross section of each susceptor is U-shaped, and wherein the wafer-mounting front side of the susceptor corresponds to an inner surface of the “U.” 
     
     
         10 . The reactor of  claim 7 , wherein the chamber is made of a material that comprises quartz. 
     
     
         11 . The reactor of  claim 7 , wherein the gas nozzle system further comprises a second gas-inlet component positioned around and substantially enclosing the gas-outlet component, wherein inner walls of the second gas-inlet component and outer walls of the gas-outlet component form a third enclosed space that opens to the chamber, and wherein the third enclosed space is configured to inject purge gas into the chamber. 
     
     
         12 . The reactor of  claim 11 , wherein the purge gas is injected into a space between walls of the chamber and the susceptors positioned inside the chamber, thereby reducing deposition on the walls of the chamber. 
     
     
         13 . The reactor of  claim 7 , wherein the first enclosed space formed by the inner walls of gas-inlet component is substantially aligned to the narrow channel between the susceptors, thereby allowing precursor gas to be injected into the narrow channel. 
     
     
         14 . The reactor of  claim 7 , wherein the second enclosed space is configured to output exhaust gas from the chamber. 
     
     
         15 . The reactor of  claim 7 , wherein at least one component of the gas nozzle system is made of a material that comprises quartz. 
     
     
         16 . An apparatus, comprising:
 means for injecting precursor gases into a reactor chamber via a gas-inlet component whose inner walls form a first enclosed space that opens to the reactor chamber;   means for outputting exhaust gas from the reactor chamber via a gas-outlet component positioned around and substantially enclosing the gas-inlet component, wherein inner walls of the gas-outlet component and outer walls of the gas-inlet component form a second enclosed space that opens to the reactor chamber; and   means for injecting purge gas into the reactor chamber via a second a gas-inlet component positioned around and substantially enclosing the gas-outlet component.