Chalcogenide-based photovoltaic devices and methods of manufacturing the same

Abstract

In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

1 . A method comprising:
 sputtering one or more absorber layers over a substrate, wherein:
 the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers; 
 the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals; and 
 the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te). 
   
     
     
         2 . The method of  claim 1 , wherein the sputtering comprises magnetron sputtering. 
     
     
         3 . The method of  claim 1 , wherein the sputtering of at least one of the absorber layers comprises sputtering in the presence of a reactive gas that comprises one or more of H 2 S or H 2 Se. 
     
     
         4 . The method of  claim 1 , wherein the at least one chalcogenide further comprises one or more of gallium (Ga), zinc (Zn), aluminum (AI), and cadmium (Cd). 
     
     
         5 . The method of  claim 1 , wherein the distance between the substrate and sputter target for sputtering at least one of the absorber layers is less than 8 cm. 
     
     
         6 . The method of  claim 1 , wherein the sputtering of at least one of the absorber layers comprises sputtering at a bias voltage less than approximately −150 Volts. 
     
     
         7 . The method of  claim 1 , wherein the sputtering of at least one of the absorber layers comprises exciting the plasma during the sputtering with radio frequency (RF) or current pulse power supplies. 
     
     
         8 . A method comprising:
 sputtering one or more absorber layers over a non-heated substrate, wherein the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te); and   annealing the sputtered absorber layers at an annealing temperature that exceeds 350 degrees Celsius.