Liquid crystal display device and method of fabrication for the same

Abstract

A liquid crystal display device is disclosed. The device includes: a first substrate, a thin film transistor formed in a first, non-transmissive region on the first substrate, including a gate electrode, a source electrode and a drain electrode, and a storage capacitor formed in a second, transmissive region on the first substrate, where a first electrode and a second electrode of the storage capacitor are made of a transparent conductive material

What is claimed is: 
     
         1 . A method of fabrication of a liquid crystal display device, the method comprising:
 forming a gate electrode of a thin film transistor and a first electrode of a storage capacitor on a first substrate, wherein the gate electrode comprises a transparent conductive material, and a low-resistance metal, stacked together;   forming a second electrode of the storage capacitor on a first insulating layer overlapping the first electrode;   forming a second insulating layer comprising a depressed pattern exposing a portion of the second electrode;   forming a domain forming layer; and   forming a pixel electrode on the domain forming layer overlapping the second electrode, wherein the first electrode and the second electrode of the storage capacitor comprise a transparent conductive material.   
     
     
         2 . The method as claimed in  claim 1  further comprising:
 disposing a second substrate having a common electrode to face the first substrate; and 
 forming a liquid crystal layer disposed between the first substrate and the second substrate and comprising a reactive mesogen. 
 
     
     
         3 . The method as claimed in  claim 1  wherein the gate electrode and the first electrode are formed using a halftone mask process. 
     
     
         4 . The method as claimed in  claim 1 , further comprising:
 forming a semiconductor layer above or under a region overlapping the gate electrode; and   forming a source electrode and a drain electrode electrically connected with the semiconductor layer.   
     
     
         5 . The method as claimed in  claim 1 , further comprising forming a contact electrode on the second electrode exposed by the depressed pattern.