US2015194545A1PendingUtilityA1

Dendritic Metal Structures, Methods for Making Dendritic Metal Structures, and Devices Including Them

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Individually held — no corporate assignee on recordPriority: Nov 14, 2010Filed: Mar 18, 2015Published: Jul 9, 2015
Est. expiryNov 14, 2030(~4.3 yrs left)· nominal 20-yr term from priority
Inventors:Michael N. KozickiMinghan Ren
H10P 14/47H10W 20/40H10D 64/205H10H 20/8312H10H 20/832H10H 20/831H10F 77/206H10F 77/211H01L 33/382H01L 31/022425H01L 31/022408H01L 33/40C25D 7/00C25D 5/54C25D 5/56Y02E10/50C25D 3/46C25D 7/126C25D 7/08C25D 3/38
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Claims

Abstract

The present invention relates generally to dendritic metal structures and devices including them. The present invention also relates particularly to methods for making dendritic metal structures without the use of solid electrolyte materials. In one aspect, a method for constructing a dendritic metal structure includes providing a substrate having a surface and a cathode disposed on the surface; providing an anode comprising a metal; and disposing a liquid on the surface of the substrate, such that the liquid is in electrical contact with the anode and the cathode; and then applying a bias voltage across the cathode and the anode sufficient to grow the dendritic metal structure extending from the cathode. The methods described herein can be used to grow dendritic metal electrodes, which can be useful in devices such as LEDs, touchscreens, solar cells and photodetectors.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An electrical device comprising:
 a first electrode comprising at least one dendritic metal structure;   a second electrode; and   an electrically active structure disposed between the dendritic metal structure and the second electrode,   wherein substantially no solid electrolyte is in contact with the dendritic metal structure.   
     
     
         2 . The electrical device of  claim 1 , wherein the electrically active structure is a current generating structure in electrical contact with the second electrode and the electrode comprising the at least one dendritic metal structure. 
     
     
         3 . The electrical device according to  claim 2 , wherein the electrically active structure generates current in response to absorption of light. 
     
     
         4 . The electrical device of  claim 2 , wherein the electrically active structure is a p-n junction. 
     
     
         5 . The electrical device according to  claim 1 , wherein the electrically active structure changes its optical properties in response to an applied field. 
     
     
         6 . The electrical device according to  claim 1 , wherein the dendritic metal structure is formed from silver or copper. 
     
     
         7 . The electrical device according to  claim 6 , wherein the at least one dendritic metal structure is no more than about 200 nm in average thickness. 
     
     
         8 . The electrical device according to  claim 1 , wherein the at least one dendritic metal structure has an average individual segment width of no more than about 1 μm. 
     
     
         9 . The electrical device according to  claim 1 , wherein an insulating layer is disposed between the dendritic metal structure and the electrically active structure. 
     
     
         10 . A solar cell comprising the electrical device of  claim 1 . 
     
     
         11 . A photodetector comprising the electrical device of  claim 1 . 
     
     
         12 . A light emitting diode comprising the electrical device of  claim 1 . 
     
     
         13 . An electrical device comprising:
 a substantially non-conductive material; and   an electrode comprising at least one dendritic metal structure disposed on the substantially non-conductive material,   wherein substantially no solid electrolyte is in contact with the dendritic metal structure.   
     
     
         14 . The electrical device according to  claim 13 , wherein the dendritic metal structure is formed from silver or copper. 
     
     
         15 . The electrical device according to  claim 13 , wherein the at least one dendritic metal structure is no more than about 200 nm in average thickness. 
     
     
         16 . The electrical device according to  claim 13 , wherein the at least one dendritic metal structure has an average individual segment width of no more than about 1 μm. 
     
     
         17 . The electrical device according to  claim 13 , wherein the substantially non-conductive material is substantially transparent to visible light. 
     
     
         18 . A touchscreen comprising the electrical device according to  claim 13 . 
     
     
         19 . A device comprising
 a substantially non-conductive substrate, and   at least one dendritic metal structure disposed on the substrate,   wherein substantially no solid electrolyte is in contact with the dendritic metal structure.

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