US2015206721A1PendingUtilityA1

Methods and apparatus for processing a substrate

Assignee: APPLIED MATERIALS INCPriority: Jan 13, 2012Filed: Mar 16, 2015Published: Jul 23, 2015
Est. expiryJan 13, 2032(~5.4 yrs left)· nominal 20-yr term from priority
H10P 72/0436H10P 14/69433H10P 14/6512H10P 14/6504H10P 14/6328H01J 37/32715H01J 37/32458H01J 37/32522H01J 37/3244C23C 16/00
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Claims

Abstract

Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate disposed in a process chamber includes performing a process on a substrate disposed in a process chamber having a substrate support ring configured to support the substrate and a reflector plate disposed proximate a back side of the substrate; providing a first gas comprising one of an oxygen containing gas or a nitrogen containing gas to a back side of the substrate via one or more through holes disposed in the reflector plate while performing the process on the substrate; and maintaining the process chamber at a first pressure proximate a top surface of the substrate and at a second pressure proximate the bottom surface of the substrate, wherein the first pressure is greater than the second pressure sufficiently to prevent dislodgement of the substrate from the substrate support ring during processing.

Claims

exact text as granted — not AI-modified
1 . An apparatus for processing a substrate, comprising:
 a process chamber having a substrate support ring configured to support a substrate and a reflector plate disposed proximate a back side of the substrate, the reflector plate having a plurality of through holes;   wherein at least one of the plurality of through holes disposed in the reflector plate is an inlet to provide a first gas to an area proximate a back surface of the substrate; and   wherein at least one of the plurality of through holes disposed in the reflector plate is an outlet to create a flow of the gases away from the back surface of the substrate.   
     
     
         2 . The apparatus of  claim 1 , further comprising:
 a gas supply coupled to the inlet; and   a vacuum pump coupled to the outlet.   
     
     
         3 . The apparatus of  claim 1 , further comprising:
 a second inlet disposed in the process chamber to provide the first gas to an area proximate a front surface of the substrate.   
     
     
         4 . The apparatus of  claim 1 , further comprising:
 at least one of lift pins or temperature sensors disposed in at least some of the plurality of through holes.

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