US2015206749A1PendingUtilityA1

Diamond Semiconductor System and Method

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Assignee: KHAN ADAMPriority: Dec 21, 2011Filed: Jan 13, 2015Published: Jul 23, 2015
Est. expiryDec 21, 2031(~5.4 yrs left)· nominal 20-yr term from priority
Inventors:Adam Khan
H10P 95/90H10P 50/00H10P 30/2044H10P 14/3406H10P 14/2923H10P 14/44H10P 14/43H10D 64/0122H10W 20/042H10D 64/0114H10D 8/045H10D 62/8303H10D 62/60H10D 8/051H10D 8/50H01L 21/02425H01L 21/043H01L 21/0435H01L 21/02527H01L 21/324H01L 21/2855H01L 21/28556H01L 29/1602H10P 30/21H10P 30/222H10P 30/22H10P 30/28H10P 30/208
56
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Claims

Abstract

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

Claims

exact text as granted — not AI-modified
1 - 8 . (canceled) 
     
     
         9 . A method of fabricating contacts on diamond semiconductors, the method including the steps of:
 selecting a diamond semiconductor material having a surface;   forming a carbide interface contact layer on the surface; and   forming a metal layer on the interface contact layer.   
     
     
         10 . The method of fabricating contacts on diamond semiconductors of  claim 9 , wherein the metal layer is a degeneratively doped semiconductor layer. 
     
     
         11 . The method of fabricating contacts on diamond semiconductors of  claim 9 , wherein the metal layer is deposed via sputtering. 
     
     
         12 . The method of fabricating contacts on diamond semiconductors of  claim 9 , wherein the metal layer is deposed via vapor deposition. 
     
     
         13 . The method of fabricating contacts on diamond semiconductors of  claim 9 , wherein the metal layer is a transparent metal. 
     
     
         14 . The method of fabricating contacts on diamond semiconductors of  claim 9 , further including the step of deposing the diamond material on a metal substrate. 
     
     
         15 . The method of fabricating contacts on diamond semiconductors of  claim 9 , further including the step of annealing the diamond material. 
     
     
         16 . A diamond semiconductor formed according to the method of  claim 9 , wherein the diamond semiconductor material has n-type donor atoms and a diamond lattice, wherein at least 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm 2 /Vs to the diamond lattice at 100 kPa and 300K.

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