US2015214390A1PendingUtilityA1
Composition for forming n-type diffusion layer, method of forming n-type diffusion layer, and method of producing photovoltaic cell
Est. expiryApr 23, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Inventors:Yoichi MachiiMasato YoshidaTakeshi NojiriKaoru OkaniwaMitsunori IwamuroShuichiro AdachiTetsuya SatoKeiko Kizawa
H10P 32/171H10P 32/141H10P 32/19H10F 71/00H10F 71/121H10F 10/14H10F 77/70H10F 77/211H10F 77/1223H01L 31/0288C03C 8/18H10P 32/14Y02P70/50C03C 3/097Y02E10/547
47
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
Claims
exact text as granted — not AI-modified1 . A composition for forming an n-type diffusion layer, the composition comprising a glass powder and a dispersion medium, wherein the glass powder includes a donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less.
2 . The composition for forming an n-type diffusion layer according to claim 1 , wherein the donor element is at least one selected from phosphorous (P) or antimony (Sb).
3 . The composition for forming an n-type diffusion layer according to claim 1 , wherein the glass powder comprises at least one donor element-containing material selected from P 2 O 3 , P 2 O 5 or Sb 2 O 3 , and at least one glass component material selected from S i O 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 or MoO 3 .
4 . The composition for forming an n-type diffusion layer according to claim 1 , further comprising a metal element that is crystallized upon reacting with the glass powder.
5 . The composition for forming an n-type diffusion layer according to claim 4 , wherein the metal element that is crystallized upon reacting with the glass powder is at least one selected from silver (Ag), silicon (Si) or zinc (Zn).
6 . The composition for forming an n-type diffusion layer according to claim 1 , wherein the life time killer element is at least one selected from iron (Fe), copper (Cu), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W) or gold (Au).
7 - 8 . (canceled)Join the waitlist — get patent alerts
Track US2015214390A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.