Semiconductor Device, In Particular A Solar Cell

Abstract

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminium oxide, aluminium nitride or aluminium oxynitride and at least one further element.

1 . A solar cell, comprising a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface passivates the semiconductor substrate surface, wherein:
 the passivation layer consists essentially of a compound containing a compound according to a formula of Al x M m O y  or Al x M m , where M is nitrogen, m being greater than 0, with M present in the passivation layer in a stoichiometrically significant amount.   
     
     
         2 . The solar cell according to  claim 1 , wherein the passivation layer is arranged directly on the semiconductor substrate surface. 
     
     
         3 . The solar cell according to  claim 1 , wherein the passivation further comprises one or more further passivation layers arranged between the passivation layer and the semiconductor substrate surface. 
     
     
         4 . The solar cell according to  claim 3 , wherein at least one further passivation layer is arranged on a side of the passivation layer which is remote from the semiconductor substrate surface. 
     
     
         5 . The solar cell according to  claim 3 , wherein the passivation is comprised of an alternating layer sequence composed of the passivation layer and a further passivation layer. 
     
     
         6 . The solar cell according to  claim 1 , wherein the passivation layer is deposited by atomic layer deposition. 
     
     
         7 . The solar cell according to  claim 1 , wherein the passivation layer is an antireflection layer. 
     
     
         8 . The solar cell according to  claim 1  wherein the passivation layer is a reflection layer. 
     
     
         9 . The solar cell of  claim 1  further comprising an antireflection layer, the passivation layer being a part thereof. 
     
     
         10 . The solar cell of  claim 1  further comprising a reflection layer, the passivation layer being a part thereof. 
     
     
         11 . The solar cell of  claim 1  wherein a density of M in the passivation layer is at least 1 atomic percent