Monolithic multijunction power converter

Abstract

Resonant cavity power converters for converting radiation in the wavelength range from 1 micron to 1.55 micron are disclosed. The resonant cavity power converters can be formed from one or more lattice matched GaInNAsSb junctions and can include distributed Bragg reflectors and/or mirrored surfaces for increasing the power conversion efficiency.

What is claimed is: 
     
         1 . A power converter, comprising:
 one or more GaInNAsSb junctions;   a first semiconductor layer overlying the one or more GaInNAsSb junctions; and   a second semiconductor layer underlying the one or more GaInNAsSb junctions;   wherein a thickness of the one or more GaInNAsSb junctions, the first semiconductor layer and the second semiconductor layer are selected to provide a resonant cavity at an irradiated wavelength.   
     
     
         2 . The power converter of  claim 1 , wherein each of the one or more GaInNAsSb junctions,
 is lattice matched to GaAs;   comprises Ga 1−x In x N y As 1−y−z Sb z , in which values for x, y, and z are 0≦x≦0.24, 0.01≦y≦0.07 and 0.001≦z≦0.20; and   is characterized by a bandgap corresponding to the energy of the irradiated wavelength.   
     
     
         3 . The power converter of  claim 1 , wherein the wavelength is from 1.3 microns to 1.55 microns. 
     
     
         4 . The power converter of  claim 1 , wherein the wavelength is 1.30 microns to 1.35 microns. 
     
     
         5 . The power converter of  claim 1 , comprising:
 a first distributed Bragg reflector overlying the first semiconductor layer;   a second distributed Bragg reflector underlying the second semiconductor layer; or   a first distributed Bragg reflector overlying the first semiconductor layer and a second distributed Bragg reflector underlying the second semiconductor layer.   
     
     
         6 . The power converter of  claim 1 , comprising:
 a first distributed Bragg reflector overlying the first semiconductor layer;   a second distributed Bragg reflector underlying the second semiconductor layer; and   a substrate underlying the second distributed Bragg reflector.   
     
     
         7 . The power converter of  claim 1 , comprising:
 a second distributed Bragg reflector underlying the second semiconductor layer; and   a substrate underlying the second distributed Bragg reflector.   
     
     
         8 . The power converter of  claim 7 , comprising an antireflection coating overlying the first semiconductor layer. 
     
     
         9 . The power converter of  claim 1 , comprising:
 a first distributed Bragg reflector overlying the first semiconductor layer; and   a back mirror underlying the second semiconductor layer.   
     
     
         10 . The power converter of  claim 1 , comprising:
 a second distributed Bragg reflector underlying the second semiconductor layer; and   a back mirror underlying the second distributed Bragg reflector.   
     
     
         11 . The power converter of  claim 1 , comprising:
 a first distributed Bragg reflector overlying the first semiconductor layer;   a second distributed Bragg reflector underlying the second semiconductor layer; and   a substrate overlying the first distributed Bragg reflector.   
     
     
         12 . The power converter of  claim 1 , comprising:
 a first distributed Bragg reflector overlying the first semiconductor layer;   a substrate overlying the first distributed Bragg reflector; and   a back mirror underlying the second semiconductor layer.   
     
     
         13 . The power converter of  claim 1 , comprising:
 a first lateral conductive layer overlying the first semiconductor layer; and   a second lateral conductive layer overlying the second semiconductor layer.   
     
     
         14 . The power converter of  claim 13 , comprising:
 a first electrical contact to the first lateral conductive layer overlying the first semiconductor layer; and   a second electrical contact to the second lateral conductive layer overlying the second semiconductor layer.   
     
     
         15 . The power converter of  claim 1 , characterized by an efficiency of at least 20% at an irradiated input power from 0.6 W to 6 W. 
     
     
         16 . A power converter, comprising a plurality of the power converters of  claim 1  configured in a Pi structure. 
     
     
         17 . A power converter, comprising a plurality of the power converters of  claim 1  interconnected in series.