US2015228335A1PendingUtilityA1
Organic molecular memory
Est. expiryMar 24, 2031(~4.7 yrs left)· nominal 20-yr term from priority
Inventors:Hideyuki NishizawaReiko YoshimuraTsukasa TadaShigeki HattoriMasaya TeraiSatoshi MikoshibaKoji Asakawa
B82Y 10/00G11C 2213/53G11C 13/0016G11C 13/0014H01L 45/1233H01L 45/1253H10K 10/701H10K 85/311H10K 85/381H10N 70/826H10N 70/841
51
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An organic molecular memory comprising:
a first conductive layer; a second conductive layer; and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including a first molecule having a variable-resistance molecular chain with a fused polycyclic group.
2 . The memory according to claim 1 , wherein the organic molecular layer includes a second organic molecule having a variable-resistance molecular chain without a fused polycyclic group.
3 . The memory according to claim 2 , wherein the variable-resistance molecular chain of the first organic molecule and the variable-resistance molecular chain of the second organic molecule have same carbon skeleton.
4 . The memory according to claim 1 , wherein relative permittivity of the organic molecular layer is 5.5 or higher.
5 . The memory according to claim 1 , wherein an electron-withdrawing substituent bonds to the fused polycyclic group.
6 . The memory according to claim 1 , wherein the fused polycyclic group is anthracene.
7 . The memory according to claim 5 , wherein the electron-withdrawing substituent is a fluorine atom, a chlorine atom, or a cyano group.
8 . The memory according to claim 1 , wherein
the first conductive layer and the second conductive layer are electrode interconnects intersecting with each other, and the organic molecular layer is located at an intersection portion between the first conductive layer and the second conductive layer.Join the waitlist — get patent alerts
Track US2015228335A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.