Surface Treatments for Alignment of Block Copolymers

Abstract

The present invention relates to a method the synthesis and utilization of random, cross-linked, substituted polystyrene copolymers as polymeric cross-linked surface treatments (PXSTs) to control the orientation of physical features of a block copolymer deposited over the first copolymer. Such methods have many uses including multiple applications in the semi-conductor industry including production of templates for nanoimprint lithography.

1 - 13 . (canceled) 
     
     
         14 . A composition, comprising a second polymer film coated on a first polymer film, said first polymer film comprising first and second monomers, said second polymer film comprising third and fourth monomers, wherein said third and fourth monomers are chemically different from said first and second monomers. 
     
     
         15 . The composition of  claim 14 , wherein said second film comprises nanostructures, said structures controlled by the chemical nature of said first film. 
     
     
         16 . The composition of  claim 15 , wherein said nanostructures comprise cylindrical nanostructures, said cylindrical nanostructures being substantially vertically aligned with respect to the plane of the first film. 
     
     
         17 . The composition of  claim 14 , wherein said second film comprises a polystyrene-block-poly(methyl methacrylate) copolymer. 
     
     
         18 . The composition of  claim 14 , wherein said first polymer film is coated on a surface. 
     
     
         19 . The composition of  claim 14 , wherein said first polymer film is crosslinked. 
     
     
         20 . The composition of  claim 14 , wherein the thickness of said first film is between 10 and 30 nm. 
     
     
         21 . The composition of  claim 20 , wherein said thickness of said first film is between 15 and 20 nm. 
     
     
         22 . The composition of  claim 14 , wherein the thickness of said second film is between 10 and 100 nm. 
     
     
         23 . The composition of  claim 22 , wherein said thickness of said second film is between 20 and 70 nm.