Boron doped single crystal diamond electrochemical synthesis electrode

Abstract

Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

What is claimed is: 
     
         1 . (canceled) 
     
     
         2 . A synthetic diamond comprising:
 a diamond layer of undoped natural carbon isotope; and   a single layer of  13 C diamond doped with boron formed on the undoped diamond layer such that a layer junction is formed with band gap discontinuities.   
     
     
         3 . The diamond of  claim 2  wherein the layer of  13 C boron doped diamond has a wider bandgap than the undoped layer of diamond. 
     
     
         4 . The diamond of  claim 3  wherein the single layer of  13 C diamond includes a boron concentration greater than or equal to 0.005 ppma and less than or equal to 10,000 ppma. 
     
     
         5 . The diamond of  claim 4  wherein the single layer of  13 C diamond includes a boron concentration greater than or equal to 0.01 ppma and less than or equal to 3000 ppma. 
     
     
         6 . A synthetic diamond comprising:
 alternating layers of single crystal CVD grown diamond having different concentrations of impurities other than carbon isotopes, wherein at least one of the layers of the alternating layers includes a substantially  12 C diamond having  13 C less than 0.1%.   
     
     
         7 . The method of  claim 6  wherein selected alternating layers are doped with boron, and the other layers are undoped. 
     
     
         8 . The method of  claim 7  wherein dislocations are suppressed between layers. 
     
     
         9 . The method of  claim 7  wherein birefringence of the resulting diamond is minimized. 
     
     
         10 . The diamond of  claim 6  wherein:
 the layers doped with boron are in tension; and 
 the undoped layers are in compression. 
 
     
     
         11 . The method of  claim 6  wherein selected alternating layers are doped with nitrogen, and the other layers are undoped. 
     
     
         12 . The method of  claim 11  wherein dislocations are suppressed between layers. 
     
     
         13 . The method of  claim 11  wherein birefringence of the resulting diamond is minimized. 
     
     
         14 . The diamond of  claim 6  wherein:
 the layers doped with nitrogen are in tension; and the undoped layers are in compression. 
 
     
     
         15 . A synthetic diamond comprising:
 a diamond plate; and   a single layer of diamond formed on the diamond plate and having an isotope concentration different from that of the diamond plate such that the diamond plate is strengthened without boron or nitrogen doping.   
     
     
         16 . The diamond of  claim 15  wherein the single layer comprises  13 C diamond. 
     
     
         17 . The diamond of  claim 16  wherein the single layer of  13 C diamond is doped with boron. 
     
     
         18 . The diamond of  claim 17  wherein the single layer of boron doped  13 C diamond provides a substrate for semiconductor devices. 
     
     
         19 . The diamond of  claim 18  wherein the substrate provides a high lateral rate of heat conduction. 
     
     
         20 . The diamond of  claim 19  having a high axial rate of heat conduction.