US2015249798A1PendingUtilityA1

Solid state imaging device and camera system

53
Assignee: SONY CORPPriority: Sep 16, 2003Filed: Feb 26, 2015Published: Sep 3, 2015
Est. expirySep 16, 2023(expired)· nominal 20-yr term from priority
H04N 25/677H04N 25/76H04N 25/441H04N 25/779H04N 25/77H10F 39/18H04N 25/00H04N 25/78H04N 25/616H04N 25/7795H10F 39/8037H10F 39/812H01L 27/14638H04N 5/378H01L 27/14643H04N 5/3765H01L 27/14612H04N 25/62
53
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Claims

Abstract

An MOS type solid state imaging device in which unit pixels 10 each having a photodiode 11 , a transfer transistor 12 for transferring the signal of the photodiode 11 to a floating node N 11 , an amplifier transistor 13 for outputting the signal of the floating node N 11 to a vertical signal line 22 , and a reset transistor 14 for resetting the floating node N 11 are arrayed in a matrix and in which a gate voltage of the reset transistor 14 is controlled by three values of a power source potential (for example 3V), a ground potential (OV), and a negative power source potential (for example −1V).

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An imaging device comprising:
 a vertical drive circuit; and   a plurality of pixels,   
       wherein
 each pixel includes:
 (a) a photoelectric converter; 
 (b) a floating node; 
 (c) a transfer transistor is configured to transfer a signal of the photoelectric converter to the floating node; 
 (d) an amplifier transistor is configured to output a signal of the floating node to a signal line; and 
 (e) a reset transistor is configured to reset the floating node, 
 
 the vertical drive circuit is configured to:
 supply a first drive signal to a control terminal of the transfer transistor; and 
 supply a second drive signal to a control terminal of the reset transistor, 
 
 the second drive signal includes a first level potential higher than a ground potential level, and a second level potential lower than the ground potential level. 
 
     
     
         2 . The imaging device according to  claim 1 , wherein the vertical drive circuit is configured to set the control terminal of the reset transistor from the first level potential to the second level potential after passing the ground level potential. 
     
     
         3 . The imaging device according to  claim 1 , wherein the vertical drive circuit is configured to supply a third drive signal to a current terminal of the reset transistor. 
     
     
         4 . The imaging device according to  claim 1 , wherein the vertical drive circuit is configured to supply the third drive signal to the current terminal of the reset transistor through a transistor. 
     
     
         5 . The imaging device according to  claim 1 , further comprising a circuit configured to sample and hold a potential supplied from the pixel through the signal line. 
     
     
         6 . The imaging device according to  claim 1 , wherein the ground potential level is 0V.

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