US2015255667A1PendingUtilityA1
Apparatus and methods for manufacturing thin-film solar cells
Assignee: HANERGY HI TECH POWER HK LTDPriority: Apr 15, 2008Filed: May 26, 2015Published: Sep 10, 2015
Est. expiryApr 15, 2028(~1.7 yrs left)· nominal 20-yr term from priority
H10F 77/1699H10F 77/1694H10F 77/126H10F 71/00H10F 19/30H10F 10/167H10F 71/137C23C 14/024C23C 14/562H01L 31/03923H01L 31/0322H01L 31/1876C23C 14/243Y02P70/50Y02E10/541C23C 14/542C23C 14/0623C23C 14/22
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Claims
Abstract
Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of depositing a semiconductor absorber layer onto a flexible substrate web, comprising:
transporting a continuous flexible substrate web from a pay-out roll through a plurality of deposition zones and then to a take-up roll while maintaining a tension on the substrate sufficient for the substrate to maintain a substantially flat surface in each of the deposition zones, wherein transporting the substrate web through the deposition zones includes:
partially wrapping the substrate web around a first transport roller by a first wrap angle, to orient the substrate web at a first angle relative to the horizontal;
passing the substrate web through a first substantially enclosed gallium indium deposition zone at the first angle;
partially wrapping the substrate web around a second transport roller by a second wrap angle, to orient the substrate web at a second angle relative to the horizontal;
passing the substrate through a first substantially enclosed copper deposition zone at the second angle;
partially wrapping the substrate web around a third transport roller by a third wrap angle, to orient the substrate web at a third angle relative to the horizontal; and
passing the substrate through a second substantially enclosed gallium indium deposition zone at the third angle;
receiving the substrate with a take-up roll; and wherein within each deposition zone, a substantially enclosed effusion assembly deposits material onto the substrate as the substrate passes through the deposition zone.
2 . The method of claim 1 , wherein the wrap angles are each sufficient to create enough friction to cause the roller to rotate with the moving substrate web and thereby to prevent the substrate web from sliding across the roller.
3 . The method of claim 2 , wherein the wrap angles are each in the range of 3-10 degrees.
4 . The method of claim 3 , wherein the wrap angles are each approximately 7 degrees.
5 . The method of claim 1 , wherein the tension on the substrate web is at least 30 pounds.
6 . The method of claim 1 , wherein the substrate web is 30 centimeters wide, and the tension on the substrate web is in the range of 30-35 pounds.
7 . The method of claim 1 , wherein the pay-out roll and the take-up roll are driven by independent motors.
8 . A method of depositing a semiconductor absorber layer onto a flexible substrate web, comprising:
maintaining a tension of approximately 30-35 pounds on a substrate web; and while maintaining the tension of approximately 30-35 pounds:
partially wrapping the substrate web around a first transport roller by a first wrap angle, to orient the substrate web at a first angle relative to the horizontal;
passing the substrate web through a first substantially enclosed gallium indium deposition zone at the first angle;
partially wrapping the substrate web around a second transport roller by a second wrap angle, to orient the substrate web at a second angle relative to the horizontal;
passing the substrate through a first substantially enclosed copper deposition zone at the second angle;
partially wrapping the substrate web around a third transport roller by a third wrap angle, to orient the substrate web at a third angle relative to the horizontal; and
passing the substrate through a second substantially enclosed gallium indium deposition zone at the third angle;
wherein within each deposition zone, a substantially enclosed effusion assembly deposits material onto the substrate as the substrate passes through the deposition zone.
9 . The method of claim 8 , wherein the wrap angles are each sufficient to create enough friction to cause the roller to rotate with the moving substrate web and thereby to prevent the substrate web from sliding across the roller.
10 . The method of claim 9 , wherein the wrap angles are each in the range of 3-10 degrees.
11 . The method of claim 10 , wherein the wrap angles are each approximately 7 degrees.
12 . The method of claim 8 , wherein the substrate web is 30 centimeters wide.
13 . The method of claim 8 , wherein the pay-out roll and the take-up roll are driven by independent motors.
14 . A method of depositing a semiconductor absorber layer onto a flexible substrate web, comprising:
providing a substrate web under tension sufficient to maintain a substantially flat surface of the web in each of a plurality of deposition zones; orienting the substrate web at a first angle relative to the horizontal by partially wrapping the substrate web around a first free roller by a first wrap angle sufficient to prevent the substrate web from sliding across the first roller; passing the substrate web through a first substantially enclosed gallium indium deposition zone at the first angle; orienting the substrate web at a second angle relative to the horizontal by partially wrapping the substrate web around a second free roller by a second wrap angle sufficient to prevent the substrate web from sliding across the second roller; passing the substrate through a first substantially enclosed copper deposition zone at the second angle; orienting the substrate web at a third angle relative to the horizontal by partially wrapping the substrate web around a third free roller by a third wrap angle sufficient to prevent the substrate web from sliding across the third roller; and passing the substrate through a second substantially enclosed gallium indium deposition zone at the third angle; wherein within each deposition zone, a substantially enclosed effusion assembly deposits material onto the substantially flat surface of the web as the web passes through the deposition zone.
15 . The method of claim 14 , wherein the tension is at least 30 pounds.
16 . The method of claim 15 , wherein the substrate web is 30 centimeters wide.
17 . The method of claim 14 , wherein the wrap angles are each in the range of 3-10 degrees.
18 . The method of claim 17 , wherein the wrap angles are each approximately 7 degrees.
19 . The method of claim 14 , wherein tension is maintained on the web by independent motors of a pay-out roll and a take-up roll.
20 . The method of claim 14 , wherein each substantially enclosed effusion assembly includes an aperture formed in a top surface angled to compliment the angle of the substrate in the associated deposition zone.Join the waitlist — get patent alerts
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