Epitaxial growth systems

Abstract

Disclosed is about an epitaxial growth system, including an epitaxial growth reactor chamber; a susceptor disposed in the epitaxial growth reactor chamber, wherein the susceptor includes a top surface and a side surface; a plurality of wafer fixing elements disposed on the top surface, and each of the wafer fixing elements has a boundary; a plurality of first heating elements directly under the susceptor arranged in parallel to the top surface; and a second heating element disposed directly under the outermost first heating element; wherein no other heating elements are disposed directly under the first heating elements other than the outermost first heating element; and wherein the first and the second heating elements are independently controllable.

What is claimed is: 
     
         1 . An epitaxial growth system, comprising:
 an epitaxial growth reactor chamber;   a susceptor disposed in the epitaxial growth reactor chamber, wherein the susceptor includes a top surface and a side surface;   a plurality of wafer fixing elements disposed on the top surface, and each of the wafer fixing elements has a boundary;   a plurality of first heating elements directly under the susceptor arranged in parallel to the top surface; and   a second heating element disposed directly under the outermost first heating element; and no other heating elements are disposed directly under the first healing elements other than the outermost first heating element;   wherein the first and the second heating elements are independently controllable.   
     
     
         2 . The system as claimed in  claim 1 , further comprising a rotation device connected to a geometry center of the susceptor. 
     
     
         3 . The system as claimed in  claim 1 , further comprising a plurality of gas input elements disposed in the epitaxial growth reactor chamber for providing process gases during an epitaxy process. 
     
     
         4 . The system as claimed in  claim 1 , wherein the susceptor comprises:
 a first sidewall corresponding to the outermost first heating element; and   a second sidewall not corresponding to the outermost first heating element; wherein the first sidewall is thinner than the second sidewall.   
     
     
         5 . The system as claimed in  claim 1 , wherein an edge part of the susceptor corresponding to the outermost first heating element of the first heating elements is thinner than a part of the susceptor not corresponding to the outermost first heating element. 
     
     
         6 . The system as claimed in  claim 1 , wherein a first minimum distance between the second heating element and the side surface is greater than or equal to a second minimum distance between the boundary of the outermost wafer fixing element and the side surface; and a difference between the first minimum distance and the second minimum distance is less than or equal to 5 mm. 
     
     
         7 . The system as claimed in  claim 1 , wherein each of the first heating elements is apart from the top surface with a first distance, and the first distances of the first heating elements are substantially the same. 
     
     
         8 . An epitaxial growth system, comprising:
 an epitaxial growth reactor chamber;   a susceptor disposed in the epitaxial growth reactor chamber, wherein the susceptor includes a top surface and a side surface;   a plurality of wafer fixing elements disposed on the top surface, and each of the wafer fixing elements having a boundary;   a plurality of first heating elements being apart from the top surface with a first distance, wherein the first distances of the first healing elements are substantially the same;   a second heating element being apart from the top surface with a second distance less than the first distance; and   a third heating element directly under the second healing element, and no other heating elements are disposed directly under the plurality of first heating elements other than the second heating element;   wherein the first, the second and the third heating elements are independently controllable.   
     
     
         9 . The system as claimed in  claim 8 , wherein a first minimum distance between the second heating element and the side surface is greater than or equal to a second minimum distance between the boundary of the outermost wafer fixing element and the side surface; and a difference between the first minimum distance and the second minimum distance is less than or equal to 5 mm. 
     
     
         10 . The system as claimed in  claim 8 , further comprising a rotation device connected to a geometry center of the susceptor. 
     
     
         11 . The system as claimed in  claim 8 , further comprising a plurality of gas input elements disposed in the epitaxial growth reactor chamber for providing process gases during an epitaxy process. 
     
     
         12 . The system as claimed in  claim 8 , wherein the susceptor comprises:
 a first sidewall corresponding to the second heating element; and   a second sidewall not corresponding to the second heating element; wherein the first sidewall is thinner than the second sidewall.