Semiconductor device, display device including semiconductor device, display module including display device, and electronic device including semiconductor device, display device, and display module
Abstract
A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×10 15 molecules/cm 3 by thermal desorption spectroscopy.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A semiconductor device comprising:
a first conductive film; a first insulating film over the first conductive film; a second conductive film over the first insulating film; a second insulating film over the second conductive film; a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film; and a third insulating film over the third conductive film, wherein the third conductive film includes indium and oxygen, and wherein the third insulating film includes silicon and nitrogen, and the number of ammonia molecules released from the third insulating film is less than or equal to 1×10 15 molecules/cm 3 by thermal desorption spectroscopy.
2 . The semiconductor device according to claim 1 , wherein the third conductive film further includes tin and silicon.
3 . A display device comprising a display element and the semiconductor device according to claim 1 .
4 . A display module comprising a touch sensor and the display device according to claim 3 .
5 . An electronic device comprising an operation key, a battery and the semiconductor device according to claim 1 .
6 . A semiconductor device comprising:
a first conductive film; a first insulating film over the first conductive film; an oxide semiconductor film over the first insulating film; a pair of second conductive films electrically connected to the oxide semiconductor film; a second insulating film over the oxide semiconductor film and the pair of second conductive films; a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film; and a third insulating film over the third conductive film, wherein the third conductive film includes indium and oxygen, and wherein the third insulating film includes silicon and nitrogen, and the number of ammonia molecules released from the third insulating film is less than or equal to 1×10 15 molecules/cm 3 by thermal desorption spectroscopy.
7 . The semiconductor device according to claim 6 , wherein the third conductive film further includes tin and silicon.
8 . The semiconductor device according to claim 6 , wherein the oxide semiconductor film includes oxygen, In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf).
9 . The semiconductor device according to claim 6 , wherein the oxide semiconductor film includes a crystal part, and wherein the crystal part has c-axis alignment.
10 . A display device comprising a display element and the semiconductor device according to claim 6 .
11 . A display module comprising a touch sensor and the display device according to claim 10 .
12 . An electronic device comprising an operation key, a battery and the semiconductor device according to claim 6 .Join the waitlist — get patent alerts
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