US2015270403A1PendingUtilityA1

Semiconductor device, display device including semiconductor device, display module including display device, and electronic device including semiconductor device, display device, and display module

Assignee: SEMICONDUCTOR ENERGY LABPriority: Mar 20, 2014Filed: Mar 17, 2015Published: Sep 24, 2015
Est. expiryMar 20, 2034(~7.7 yrs left)· nominal 20-yr term from priority
G09G 5/003G09G 2310/0275G09G 3/20G09G 2310/0267G09G 2300/0426G09G 3/3688G09G 3/3685G06F 3/041G09G 3/3674G09G 2300/0404G09G 3/3677H10D 30/6755H10D 30/6704H10D 86/451H10D 86/423H10D 86/60G06F 3/047H01L 29/24H01L 29/7869H01L 29/45H01L 27/1225H01L 29/045H01L 29/78606G06F 3/0412H10P 14/2906H10P 14/6903
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Claims

Abstract

A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×10 15 molecules/cm 3 by thermal desorption spectroscopy.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device comprising:
 a first conductive film;   a first insulating film over the first conductive film;   a second conductive film over the first insulating film;   a second insulating film over the second conductive film;   a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film; and   a third insulating film over the third conductive film,   wherein the third conductive film includes indium and oxygen, and   wherein the third insulating film includes silicon and nitrogen, and the number of ammonia molecules released from the third insulating film is less than or equal to 1×10 15  molecules/cm 3  by thermal desorption spectroscopy.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the third conductive film further includes tin and silicon. 
     
     
         3 . A display device comprising a display element and the semiconductor device according to  claim 1 . 
     
     
         4 . A display module comprising a touch sensor and the display device according to  claim 3 . 
     
     
         5 . An electronic device comprising an operation key, a battery and the semiconductor device according to  claim 1 . 
     
     
         6 . A semiconductor device comprising:
 a first conductive film;   a first insulating film over the first conductive film;   an oxide semiconductor film over the first insulating film;   a pair of second conductive films electrically connected to the oxide semiconductor film;   a second insulating film over the oxide semiconductor film and the pair of second conductive films;   a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film; and   a third insulating film over the third conductive film,   wherein the third conductive film includes indium and oxygen, and   wherein the third insulating film includes silicon and nitrogen, and the number of ammonia molecules released from the third insulating film is less than or equal to 1×10 15  molecules/cm 3  by thermal desorption spectroscopy.   
     
     
         7 . The semiconductor device according to  claim 6 , wherein the third conductive film further includes tin and silicon. 
     
     
         8 . The semiconductor device according to  claim 6 , wherein the oxide semiconductor film includes oxygen, In, Zn, and M (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf). 
     
     
         9 . The semiconductor device according to  claim 6 , wherein the oxide semiconductor film includes a crystal part, and wherein the crystal part has c-axis alignment. 
     
     
         10 . A display device comprising a display element and the semiconductor device according to  claim 6 . 
     
     
         11 . A display module comprising a touch sensor and the display device according to  claim 10 . 
     
     
         12 . An electronic device comprising an operation key, a battery and the semiconductor device according to  claim 6 .

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