Electro-optic device having nanowires interconnected into a network of nanowires

Abstract

An electro-optic device includes a first electrode, an active layer formed over and electrically connected with the first electrode, a buffer layer formed over and electrically connected with the active layer, and a second electrode formed directly on the buffer layer. The second electrode includes a plurality of nanowires interconnected into a network of nanowires. The buffer layer provides a physical barrier between the active layer and the plurality of nanowires to prevent damage to the active layer while the second electrode is formed.

1 - 28 . (canceled) 
     
     
         29 . A method of producing an electro-optic device, comprising:
 forming an active layer on a substructure;   forming a buffer layer over and electrically connected with said active layer; and
 forming an electrode directly on said buffer layer, 
 wherein said active layer comprises a bulk heterojunction organic semiconductor, 
 wherein said electrode comprises a plurality of nanowires interconnected into a network of nanowires, 
   wherein said buffer layer provides a physical barrier between said active layer and said plurality of nanowires to prevent damage to said active layer during said forming said electrode.   
     
     
         30 . A method of producing an electro-optic device according to  claim 29 , wherein said forming said active layer, said forming said buffer layer, and said forming said electrode are all solution processes. 
     
     
         31 . A method of producing an electro-optic device according to  claim 30 , wherein said forming said electrode is formed at a temperature less than 160° C.