US2015292270A1PendingUtilityA1

Polycrystalline diamond compact with enhanced thermal stability

42
Assignee: DIAMOND INNOVATIONS INCPriority: Apr 9, 2014Filed: Apr 9, 2014Published: Oct 15, 2015
Est. expiryApr 9, 2034(~7.7 yrs left)· nominal 20-yr term from priority
Inventors:Kai ZhangAbhijit SuryavanshiAlexander HirschJessica MarshallSusanne NorgrenJoel VaughnHui Zhang
E21B 10/46C22C 2204/00B22F 3/14C22C 2026/006C22C 29/08C22C 29/067C22C 26/00B22F 2005/001
42
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A superabrasive compact and a method of making the superabrasive compact are disclosed. A superabrasive compact may comprise a diamond table and a substrate. The diamond table may be attached to the substrate. The diamond table may include bonded diamond grains defining interstitial channels. The interstitial channels may be filled with non-binder materials in the first region. The interstitial channels in the second region may be filled with a binder material and an additive from the substrate.

Claims

exact text as granted — not AI-modified
1 . A superabrasive compact, comprising:
 a substrate;   a diamond table attached to the substrate, wherein the diamond table has a first region and a second region, the second region is sandwiched between the first region and the substrate, wherein the diamond table includes bonded diamond grains defining interstitial channels, the interstitial channels are filled with non-binder material in the first region, the interstitial channels in the second region are filled with a material sourced from the substrate wherein the sourced material contains a binder material and an additive from the substrate, wherein the melting point of the binder material is lower than 1350° C. at an ambient pressure.   
     
     
         2 . The superabrasive compact of the  claim 1 , wherein the non-binder material in the first region comprises silicon carbide. 
     
     
         3 . The superabrasive compact of the  claim 1 , wherein the substrate has a magnetic saturation value greater than 80%. 
     
     
         4 . The superabrasive compact of the  claim 1 , wherein the additive comprises more than 0.1 wt %, but less than 10 wt % of Cr. 
     
     
         5 . The superabrasive compact of the  claim 4 , wherein the additive comprises more than 0.1 wt %, but less than 10 wt % Mn. 
     
     
         6 . The superabrasive compact of the  claim 5 , wherein the additive comprises boron diffused onto a surface of or into the substrate. 
     
     
         7 . A method of making a superabrasive compact, comprising:
 providing at least a partially leached polycrystalline diamond table that comprises bonded diamond grains defining interstitial channels therein;   providing a material positioned near a surface of the at least partially leached polycrystalline diamond table;   providing a substrate near the at least partially leached polycrystalline diamond table such that the at least partially leached polycrystalline diamond table is sandwiched between the material and the substrate; and   subjecting the substrate and the at least partially leached polycrystalline diamond table and the material to conditions of elevated temperature and pressure suitable for producing the polycrystalline superabrasive compact, wherein the substrate comprises a binder material and an additive in a suitable amount such that the melting point of the binder material is less than 1350° C.   
     
     
         8 . The method of the  claim 7 , wherein the substrate is cemented tungsten carbide. 
     
     
         9 . The method of the  claim 7 , wherein the binder material comprises a metal selected from the group consisting of Co, Ni, Fe, and combinations thereof with more than 0.1 wt %, but less than 10% by weight of Cr as the additive. 
     
     
         10 . The method of the  claim 7 , wherein the binder material comprises a metal selected from the group consisting of Co, Ni, Fe, and combinations thereof with more than 0.1 wt %, but less than 2% by weight of Cr as the additive. 
     
     
         11 . The method of the  claim 7 , wherein the substrate has a magnetic saturation value greater than 80%. 
     
     
         12 . The method of the  claim 7 , further comprising diffusing boron containing material onto surface of or into a sintered tungsten carbide. 
     
     
         13 . The method of the  claim 7 , wherein the first region occupies from about 20% to up to about 95% volume of the at least partially leached polycrystalline diamond table. 
     
     
         14 . The method of the  claim 7 , wherein the binder material comprises a metal selected from the group consisting of Co, Ni, Fe, and combinations thereof with more than 0.1 wt %, but less than 10% by weight of Mn. 
     
     
         15 . The method of  claim 7 , wherein the binder material comprises a metal selected from the group consisting of Co, Ni, Fe, and combinations thereof with more than 0.1 wt %, but less than 5% by weight of Mo. 
     
     
         16 . The method of  claim 7 , wherein the binder material comprises a metal selected from the group consisting of Co, Ni, Fe, and combinations thereof with more than 0.1 wt %, but less than 10% by weight of Boron. 
     
     
         17 . A superabrasive compact, comprising:
 a substrate;   a diamond table attached to the substrate, wherein the diamond table has a first region and a second region, the second region is sandwiched between the first region and the substrate, wherein the diamond table includes bonded diamond grains defining interstitial channels, the interstitial channels are filled with non-binder materials in the first region, the interstitial channels in the second region are filled with a binder material and an additive from the substrate, wherein the first region occupies from about 20% to up to about 95% volume of the diamond table, wherein the melting point of the binder material is lower than 1350° C. at an ambient pressure.   
     
     
         18 . The superabrasive compact of the  claim 17 , wherein the non-binder materials comprise silicon carbide. 
     
     
         19 . The superabrasive compact of the  claim 17 , wherein the additive comprises more than 0.1 wt %, but less than 10 wt % of Cr. 
     
     
         20 . The superabrasive compact of the  claim 17 , wherein the additive comprises more than 0.1 wt %, but less than 2 wt % of Cr. 
     
     
         21 . The superabrasive compact of the  claim 17 , wherein the binder material comprises a metal selected from the group consisting of Co, Ni, Fe, and combinations thereof. 
     
     
         22 . The superabrasive compact of the  claim 17 , wherein the additive comprises more than 0.1 wt %, but less than 10 wt % Mn. 
     
     
         23 . The superabrasive compact of the  claim 22 , wherein the additive comprises boron diffused onto a surface of or into the substrate. 
     
     
         24 . The superabrasive compact of the  claim 17 , wherein the additive comprises more than 0.1 wt %, but less than 5 wt % Mo.

Join the waitlist — get patent alerts

Track US2015292270A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.