Light emitting device and manufacturing method thereof

Abstract

The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a carrier having a plurality of first metal contacts; forming a light-emitting structure comprising a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer; bonding the light-emitting structure to the carrier; forming a cap layer on a side of the light-emitting structure opposite to the carrier; and cutting the carrier and the cap layer to form a chip-scale LED unit.

What is claimed is: 
     
         1 . A method for forming a light-emitting apparatus, comprising:
 providing a carrier having a plurality of first metal contacts;   forming a light-emitting structure comprising a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer;   bonding the light-emitting structure to the carrier;   forming a cap layer on a side of the light-emitting structure opposite to the carrier; and   cutting the carrier and the cap layer to form a chip-scale LED unit.   
     
     
         2 . The method of  claim 1 , further comprising removing the substrate before forming the cap layer. 
     
     
         3 . The method of  claim 2 , wherein the step of removing the substrate is by an Excimer laser process. 
     
     
         4 . The method of  claim 1 , further comprising forming a plurality of metal layers electrically connected to the light-emitting structure for bonding to the first metal contacts. 
     
     
         5 . The method of  claim 4 , further comprising patterning the metal layers to form an uneven surface on the metal layers. 
     
     
         6 . The method of  claim 1 , further comprising removing the substrate to expose an exposed surface of the light-emitting structure after bonding the light-emitting structure to the carrier, and comprising roughening the exposed surface of the light-emitting structure. 
     
     
         7 . The method of  claim 6 , wherein after the step of roughening the exposed surface of the light-emitting structure, the exposed surface has a surface roughness Ra between 0.5 and 5 microns. 
     
     
         8 . The method of  claim 6 , wherein the step of removing the substrate is by an Excimer laser process. 
     
     
         9 . The method of  claim 1 , further comprising forming an underfill material substantially over the surface of the carrier before bonding the light-emitting structure to the first metal contacts. 
     
     
         10 . The method of  claim 9 , wherein the underfill material is electrically conductive, and the light-emitting structure is electrically connected with the carrier through the underfill material. 
     
     
         11 . The method of  claim 1 , wherein the step of forming the cap layer comprises forming a wavelength converting material on the light-emitting structure and configured to convert the light emitted from the first light-emitting structure to a first light. 
     
     
         12 . The method of  claim 11 , wherein the wavelength converting material is only formed on an upper side of the light-emitting structure without extending to a sidewall of the light-emitting structure. 
     
     
         13 . The method of  claim 1 , wherein the step of bonding the light-emitting structure to the carrier is by solder bonding. 
     
     
         14 . The method of  claim 1 , further comprising forming a reflecting layer between the light-emitting structure and the carrier. 
     
     
         15 . The method of  claim 1 , wherein the first metal contacts extend from a top surface of the carrier to a bottom surface of the carrier. 
     
     
         16 . The method of  claim 1 , wherein the carrier comprises a lower surface, metal contacts on the lower surface, and a plurality of conductive channels penetrating the carrier for connecting the first metal contacts on an upper surface of the carrier to the metal contacts on the lower surface of the carrier. 
     
     
         17 . The method of  claim 1 , wherein the cap layer comprises epoxy or silicone.