Back contact solar cell and manufacturing method thereof

Abstract

A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.

What is claimed is: 
     
         1 . A back contact solar cell comprising:
 a substrate made of crystalline silicon having a first conductivity type;   a passivation layer on one side of the substrate;   an antireflection layer on the passivation layer;   a first electrode on the other side of the substrate;   a second electrode on the other side of the substrate and separated from the first electrode;   a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type; and   a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type,   wherein the first and second semiconductor layers are an amorphous silicon layer, and the passivation layer has a bandgap energy of between about 1.8 eV and about 2.25 eV.   
     
     
         2 . The back contact solar cell of  claim 1 , wherein the passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide. 
     
     
         3 . The back contact solar cell of  claim 1 , wherein the passivation layer comprises:
 a first layer formed on the one side of the substrate, wherein the first layer includes amorphous silicon; and   a second layer formed on the first layer, wherein the second layer includes one of amorphous silicon oxide and amorphous silicon carbide.   
     
     
         4 . A method for manufacturing a back contact solar cell, the method comprising:
 forming a passivation layer on one side of a substrate made of crystalline silicon and having a first conductivity type;   forming an antireflection layer on the passivation layer;   forming a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type on the other side of the substrate at an interval; and   forming first and second electrodes on the first and second semiconductor layers, respectively,   wherein the first and second semiconductor layers are made of amorphous silicon, and the passivation layer is made of at least one of amorphous silicon oxide and amorphous silicon carbide.   
     
     
         5 . The method of  claim 4 , wherein the forming of the passivation layer comprises:
 forming a first layer made of amorphous silicon; and   forming a second layer made of at least one of amorphous silicon oxide and amorphous silicon carbide on the first layer.   
     
     
         6 . The method of  claim 4 , wherein the forming of the first second electrodes comprises:
 forming a transparent electrode layer and a metal layer sequentially.   
     
     
         7 . The method of  claim 4 , wherein the passivation layer has a bandgap energy of between about 1.8 eV and about 2.25 eV.