Deposition and Selective Removal of Conducting Helplayer for Nanostructure Processing

Abstract

A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

1 . (canceled) 
     
     
         2 . A method for making one or more nanostructures on a substrate, the method comprising:
 depositing a catalyst layer on the substrate;   depositing an insulator layer on the catalyst layer;   providing a continuous patterned conducting helplayer on the insulator layer;   creating via holes through the insulator layer from the conducting helplayer to the catalyst layer;   growing the one or more nanostructures on the catalyst layer through the via holes; and   selectively removing the conducting helplayer.   
     
     
         3 . The method according to  claim 2 , wherein the conducting helplayer is selectively removed after growing the one or more nanostructures. 
     
     
         4 . The method according to  claim 2 , wherein said step of providing said continuous patterned conducting helplayer comprises the steps of:
 depositing a continuous conducting helplayer on said insulator layer; and   patterning said conducting helplayer.   
     
     
         5 . The method according to  claim 2 , wherein said via holes are created by selectively etching the insulating layer. 
     
     
         6 . The method according to  claim 2 , wherein said conducting helplayer is completely removed. 
     
     
         7 . The method according to  claim 2 , further comprising the step of:
 etching one of the materials below the conducting helplayer using an etchant with relative selectivity, such that the catalyst and nanostructure layers are working as a mask for further processing.   
     
     
         8 . The method according to  claim 2 , wherein said substrate is conducting. 
     
     
         9 . The method according to  claim 8 , wherein said substrate comprises a metal underlayer at an upper surface thereof,
 said catalyst layer being deposited on the metal underlayer.   
     
     
         10 . The method according to  claim 2 , wherein said substrate is insulating. 
     
     
         11 . A method of making a nanostructure device, comprising the steps of:
 providing a substrate having an upper surface;   depositing a catalyst layer on the upper surface of said substrate;   depositing a helplayer on said catalyst layer;   selectively removing said helplayer to expose said catalyst layer at at least one intended position for nanostructure growth; and   growing at least one nanostructure from said catalyst layer at said at least one intended position.   
     
     
         12 . The method according to  claim 11 , further comprising the step of:
 removing said helplayer around said at least one nanostructure.   
     
     
         13 . The method according to  claim 12 , wherein said step of removing comprises etching said helplayer using said at least one nanostructure as a mask. 
     
     
         14 . The method according to  claim 11 , further comprising the step of:
 depositing an additional layer between the helplayer and the catalyst layer.   
     
     
         15 . The method according to  claim 11 , further comprising the step of:
 patterning said catalyst layer to define said at least one intended position for nanostructure growth.   
     
     
         16 . The method according to  claim 11 , further comprising the step of:
 depositing a metal layer on top of the grown nanostructures.