US2015322573A1PendingUtilityA1

Method for preparing metal from metal precursor solution and the application thereof

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Assignee: UNIV NAT TAIWANPriority: May 6, 2014Filed: Dec 5, 2014Published: Nov 12, 2015
Est. expiryMay 6, 2034(~7.8 yrs left)· nominal 20-yr term from priority
Inventors:I-Chun ChengJian-Zhang ChenCheng-Che HsuHaoming ChangHsiao-Wei LiuChia-Yun ChouTing-Jui Wu
C23C 18/08C23C 18/1275C23C 18/1283C23C 18/145C23C 18/1639C23C 18/1646C22B 4/005C23C 18/31
43
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Claims

Abstract

Method for preparing metal from metal precursor solution and the application thereof are provided. The metal precursor solution is treated by atmospheric pressure plasma jet (APPJ) and therefore transform into the metal.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for manufacturing an electrode, comprising steps of:
 providing an insulating substrate;   providing a metal precursor solution containing a metal precursor dissolved therein;   causing the metal precursor solution to distribute on the insulating substrate; and   treating the metal precursor solution distributed on the insulating substrate with an atmospheric pressure plasma jet (APPJ) to form the electrode.   
     
     
         2 . The method as claimed in  claim 1 , wherein the metal precursor solution is treated with the APPJ, causing the metal precursor to transform into a metal disposed on the insulating substrate to form the electrode. 
     
     
         3 . The method as claimed in  claim 2 , wherein the metal forms a continuous film on the insulating substrate to form the electrode. 
     
     
         4 . The method as claimed in  claim 1  further comprising a step of from the moment that the insulating substrate temperature reaches a working temperature caused by the APPJ, the metal precursor solution distributed on the insulating substrate is further treated by the APPJ for no more than 1 minute. 
     
     
         5 . The method as claimed in  claim 1 , wherein the metal precursor solution has a solute and a solvent, and the solute is the metal precursor, dissolves in the solvent and is one selected from the group consisting of HAuCl 4 , H 2 PtCl 6 , PdCl 2 , RuCl 3 , Pd(C 5 H 7 O 2 ) 2 , Cu(N 2 H 3 COO) 2 , Pd(C 5 H 8 O 2 ) 2 , Ru(C 5 H 8 O 2 ) 3 , Pd(CH 3 COO) 2 , Cu(CH 3 COO) 2 , Cu(NO 3 ) 2 , AgNO 3 , Ni(NO 3 ) 2 , Co(NO 3 ) 2  and a combination thereof. 
     
     
         6 . The method as claimed in  claim 1 , wherein the metal precursor solution has a solvent selected from the group consisting of water, chloroform, i-dioxane, toluene, methyl isobutyl ketone, p-xylene, o-xylene, bromobenzene, valeric acid, dimethyl sulfoxide, n-caproic acid and a combination thereof, and a solute being the metal precursor and dissolved in the solvent. 
     
     
         7 . The method as claimed in  claim 1 , wherein the APPJ is a nitrogen plasma jet. 
     
     
         8 . A method for manufacturing an electrode, comprising steps of:
 providing a substrate;   providing a metal precursor solution containing a metal precursor dissolved therein;   causing the metal precursor solution to distribute on the substrate; and   treating the metal precursor solution on the substrate with an atmospheric pressure plasma jet (APPJ) to form the electrode.   
     
     
         9 . The method as claimed in  claim 8 , wherein the metal precursor solution is treated with the APPJ to cause the metal precursor to transform into a metal disposed on the substrate to form the electrode. 
     
     
         10 . The method as claimed in  claim 9 , wherein when the substrate is electrically conductive, the metal has at least one of a film form and a particle form, and when the substrate is electrically insulating, the metal forms a continuous film. 
     
     
         11 . The method as claimed in  claim 9  further comprising a step of from the moment that the insulating substrate temperature reaches a working temperature caused by the APPJ, the metal precursor solution distributing on the insulating substrate is further treated by the APPJ for no more than 2 minutes. 
     
     
         12 . The method as claimed in  claim 8 , wherein the metal precursor solution has a solute and a solvent, and the solute is the metal precursor, dissolves in the solvent and is one selected from the group consisting of HAuCl 4 , H 2 PtCl 6 , PdCl 2 , RuCl 3 , Pd(C 5 H 7 O 2 ) 2 , Cu(N 2 H 3 COO) 2 , Pd(C 5 H 8 O 2 ) 2 , Ru(C 5 H 8 O 2 ) 3 , Pd(CH 3 COO) 2 , Cu(CH 3 COO) 2 , Cu(NO 3 ) 2 , AgNO 3 , Ni(NO 3 ) 2 , Co(NO 3 ) 2  and a combination thereof. 
     
     
         13 . The method as claimed in  claim 8 , wherein the metal precursor solution has a solvent selected from the group consisting of water, chloroform, i-dioxane, toluene, methyl isobutyl ketone, p-xylene, o-xylene, bromobenzene, valeric acid, dimethyl sulfoxide, n-caproic acid and a combination thereof, and a solute being the metal precursor and dissolved in the solvent. 
     
     
         14 . The method as claimed in  claim 8 , wherein the APPJ is a nitrogen plasma jet. 
     
     
         15 . A method for manufacturing a metal, comprising steps of:
 providing a metal precursor solution containing a metal precursor; and   treating the metal precursor solution with an atmospheric pressure plasma jet (APPJ) to cause the metal precursor to transform into the metal.   
     
     
         16 . The method as claimed in  claim 15 , wherein the solution has a solute and a solvent, and the solute is the metal precursor, dissolves in the solvent and is one selected from the group consisting of HAuCl 4 , H 2 PtCl 6 , PdCl 2 , RuCl 3 , Pd(C 5 H 7 O 2 ) 2 , Cu(N 2 H 3 COO) 2 , Pd(C 5 H 8 O 2 ) 2 , Ru(C 5 H 8 O 2 ) 3 , Pd(CH 3 COO) 2 , Cu(CH 3 COO) 2 , Cu(NO 3 ) 2 , AgNO 3 , Ni(NO 3 ) 2 , Co(NO 3 ) 2  and a combination thereof. 
     
     
         17 . The method as claimed in  claim 15 , wherein the solution has a solvent being one selected from the group consisting of water, chloroform, i-dioxane, toluene, methyl isobutyl ketone, p-xylene, o-xylene, bromobenzene, valeric acid, dimethyl sulfoxide, n-caproic acid and a combination thereof, and a solute being the metal precursor and dissolved in the solvent. 
     
     
         18 . The method as claimed in  claim 15 , wherein the metal has at least one of a continuous film form and a particle form. 
     
     
         19 . The method as claimed in  claim 15 , wherein the metal precursor solution is treated by the APPJ for no more than 2 minutes. 
     
     
         20 . The method as claimed in  claim 15 , wherein the APPJ is a nitrogen plasma jet.

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