US2015327410A1PendingUtilityA1

Device package and methods for the fabrication thereof

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Assignee: NUVOTRONICS LLCPriority: Sep 20, 2010Filed: Jan 21, 2015Published: Nov 12, 2015
Est. expirySep 20, 2030(~4.2 yrs left)· nominal 20-yr term from priority
H10W 90/754H10W 72/07554H10W 72/547H10W 76/134H10W 76/47H10W 76/17H10W 42/00C23C 24/082B05D 3/007C23C 16/0227B05D 3/0272C23C 28/042C23C 16/45555B05D 5/08B05D 1/005H01Q 23/00C23C 16/0272C23C 18/42H01Q 17/00C23C 28/42C23C 18/38C23C 14/14C23C 16/06H05K 9/0024
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Claims

Abstract

A microwave assembly having a substrate comprising a microwave device; said device having a die, a first layer having a dielectric constant between about 1.00 and about 1.45 and a thickness between about 0.05 and about 2 mm along with one or more layers chosen from an absorbing layer, an EMI blocking layer, a layer comprising conductive material or a metal cover.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of forming a microwave assembly, comprising:
 a. providing a microwave circuit comprising at least one microwave transmission line.   b. forming a dielectric layer having a dielectric constant between about 1.01 and about 2.00 over the circuit;   c. forming an ionic barrier layer comprising a silicone over the dielectric layer;   d. forming an electromagnetic interference blocking layer over the ionic barrier layer; and   e. forming a second ionic barrier layer comprising a silicone over said electromagnetic interference blocking layer.   
     
     
         2 . A method of forming a microwave assembly comprising:
 a. providing a microwave circuit comprising at least one microwave transmission line;   b. forming at least one dielectric layer having a dielectric constant between about 1.01 and about 2.00 over the circuit;   c. forming a least one electromagnetic interference blocking layer over the at least one dielectric layer; and   d. forming at least one ionic barrier layer over the at least one electromagnetic interference blocking layer or the at least one dielectric layer.   
     
     
         3 . The method  claim 2 , further comprising a rework in which at least one of the dielectric coating, the conductive coating or the encapsulating coating is removed and replaced. 
     
     
         4 . The method according to  claim 2 , wherein the at least one electromagnetic interference blocking layer comprises a conductive coating, a metal coating, a metallized plastic, a metal lid or combinations thereof. 
     
     
         5 . The method according to  claim 2 , wherein the at least one electromagnetic interference blocking layer is a conductive coating comprising gold, silver, copper, palladium, or platinum. 
     
     
         6 . A method of forming a microwave assembly, comprising:
 a. providing a microwave circuit comprising at least one microwave transmission line;   b. forming at least one dielectric layer having a dielectric constant between about 1.01 and about 2.00 over the microwave circuit; and   c. forming at least one ionic barrier layer over the at least one dielectric layer.   
     
     
         7 . The method according to  claim 6 , wherein the thickness of the dielectric layer is at least 25 microns. 
     
     
         8 . The method according to  claim 6 , further comprising forming at least one electromagnetic interference blocking layer over the at least one dielectric layer. 
     
     
         9 . The method according to  claim 6 , further comprising forming an electromagnetic interference absorbing layer. 
     
     
         10 . The method according to  claim 6 , wherein the electromagnetic interference absorbing layer comprises at least one of one or more electrically lossy materials, one or more magnetically lossy materials, or a combination thereof. 
     
     
         11 . The method according to  claim 6 , wherein the at least one dielectric coating comprises at least one of a syntactic foam, an expanded foam, an aerogel, or a highly porous material formed from a composite comprising a porogen. 
     
     
         12 . The method according to  claim 6 , wherein the at least one ionic barrier layer comprises at least one of a silicone, a parylene, a polyimide, or a curable BCB resin. 
     
     
         13 . The method according to  claim 6 , wherein the at least one ionic barrier comprises an electronics grade silicone. 
     
     
         14 . The method according  claim 6 , further comprising forming a dielectric layer on the microwave circuit by aerosol, atomic layer deposition, or vapor deposition. 
     
     
         15 . A non-hermetic package for protecting a microwave assembly comprising:
 a. a microwave circuit comprising at least one microwave transmission line;   b. at least one dielectric layer having a dielectric constant between about 1.01 and about 2.00 over the microwave circuit;   c. at least one electromagnetic interference blocking layer over the at least one dielectric layer; and   d. at least one ionic barrier layer over the at least one electromagnetic interference blocking layer or the at least one dielectric layer.   
     
     
         16 . The non-hermetic package of  claim 15 , wherein the at least one electromagnetic interference layer absorbs microwave radiation. 
     
     
         17 . The non-hermetic package of  claim 15 , wherein the at least one electromagnetic interference blocking layer comprises a conductive coating, a metal coating, a metallized plastic, a metal lid or combinations thereof. 
     
     
         18 . The non-hermetic package of  claim 15 , wherein the at least one electromagnetic interference blocking layer comprises a conductive coating comprising at least one metal chosen from gold, silver, copper, palladium, platinum or combinations thereof. 
     
     
         19 . A non-hermetic package for protecting a microwave assembly comprising:
 a. a microwave circuit comprising at least one microwave transmission line;   b. at least one dielectric layer having a dielectric constant between about 1.01 and about 2.00 over the microwave circuit; and   c. at least one ionic barrier layer over the at least one dielectric layer.   
     
     
         20 . The non-hermetic package of  claim 19 , wherein the thickness of the dielectric layer is at least 25 microns.

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