Magnetoresistive-based high field sensor

Abstract

An omnidirectional magnetoresistive magnetic field sensor includes a plurality of magnetic material film layers each having an equal thickness of less than 0.5 nanometers (nm), and a plurality of non-magnetic spacer layers between each of the magnetic material film layers.

1 . An omnidirectional magnetoresistive magnetic field sensor comprising:
 a plurality of magnetic material film layers each having an equal thickness of less than 0.5 nanometers (nm); and   a plurality of non-magnetic spacer layers between each of the magnetic material film layers.   
     
     
         2 . The magnetoresistive magnetic field sensor of  claim 1 , wherein the plurality of magnetic material film layers are composed of cobalt. 
     
     
         3 . The magnetoresistive magnetic field sensor of  claim 1 , wherein each of the plurality of magnetic material film layers has a thickness of about 0.3 nanometers. 
     
     
         4 . The magnetoresistive magnetic field sensor of  claim 1 , wherein the plurality of magnetic material film layers comprises four magnetic material film layers separated from one another by the plurality of non-magnetic spacer layers. 
     
     
         5 . The magnetoresistive magnetic field sensor of  claim 1 , further comprising at least one seed layer adjacent to a first magnetic material film layer of the plurality of magnetic material film layers. 
     
     
         6 . The magnetoresistive magnetic field sensor of  claim 5 , further comprising a substrate layer supporting the at least one seed layer. 
     
     
         7 . The magnetoresistive magnetic field sensor of  claim 1 , further comprising a capping layer adjacent to a last magnetic material film layer of the plurality of magnetic material film layers. 
     
     
         8 . The magnetoresistive magnetic field sensor of  claim 1 , wherein the plurality of non-magnetic spacer layers are composed of copper. 
     
     
         9 . The magnetic field sensor of  claim 1 , wherein the sensor provides a linear response to magnetic fields in a range of at least about 3 kilo-Oerstads (kOe) within a window of field magnitudes between about 0.5 kOe and about 10 kOe. 
     
     
         10 . The magnetoresistive sensor package of  claim 1 , wherein the sensor provides a linear response to magnetic fields in a plurality of directions that are above 1 kOe.