Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers
Abstract
Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.
Claims
exact text as granted — not AI-modifiedWhat is claimed:
1 . A method for forming an article, the method comprising:
providing a substrate; forming a reflective layer above the substrate; and forming a barrier layer above the reflective layer, the barrier layer comprising nickel, chromium, titanium, and aluminum.
2 . The method of claim 1 , wherein a concentration of nickel in the barrier layer is between 5% by weight and 10% by weight.
3 . The method of claim 1 , wherein a concentration of chromium in the barrier layer is between 25% by weight and 30% by weight.
4 . The method of claim 1 , wherein a concentration of titanium in the barrier layer is between 30% by weight and 35% by weight.
5 . The method of claim 1 , wherein a concentration of aluminum in the barrier layer is between 30% by weight and 35% by weight.
6 . The method of claim 1 , wherein a concentration of nickel in the barrier layer is between 5% by weight and 10% by weight, a concentration of chromium in the barrier layer is between 25% by weight and 30% by weight, a concentration of titanium in the barrier layer is between 30% by weight and 35% by weight, and a concentration of aluminum in the barrier layer is between 30% by weight and 35% by weight.
7 . The method of claim 6 , wherein the barrier layer further comprises oxygen.
8 . The method of claim 1 , wherein the nickel, chromium, titanium, and aluminum are uniformly distributed throughout the barrier layer.
9 . The method of claim 1 , wherein the barrier layer consists essentially of nickel, chromium, titanium, and aluminum.
10 . The method of claim 1 , wherein the reflective layer comprises silver.
11 . A method for forming an article, the method comprising:
providing a substrate; forming a reflective layer formed above the substrate, the reflective layer comprising silver; and forming a barrier layer formed above the reflective layer, the barrier layer comprising nickel, chromium, titanium, aluminum, and oxygen.
12 . The method of claim 11 , wherein a concentration of nickel in the barrier layer is between 5% by weight and 10% by weight.
13 . The method of claim 11 , wherein a concentration of chromium in the barrier layer is between 25% by weight and 30% by weight.
14 . The method of claim 11 , wherein a concentration of titanium in the barrier layer is between 30% by weight and 35% by weight.
15 . The method of claim 11 , wherein a concentration of aluminum in the barrier layer is between 30% by weight and 35% by weight.
16 . The method of claim 11 , wherein a concentration of nickel in the barrier layer is between 5% by weight and 10% by weight, a concentration of chromium in the barrier layer is between 25% by weight and 30% by weight, a concentration of titanium in the barrier layer is between 30% by weight and 35% by weight, and a concentration of aluminum in the barrier layer is between 30% by weight and 35% by weight, and wherein the barrier layer has a thickness of between 1 Angstroms and 100 Angstroms.
17 . The method of claim 11 , further comprising forming a seed layer between the substrate and the reflective layer, the seed layer directly contacting the reflective layer and comprising at least one of ZnO, SnO 2 , Sc 2 O 3 , Y 2 O 3 , TiO 2 , ZrO 2 , HfO 2 , V 2 O 5 , Nb 2 O 5 , Ta 2 O 5 , CrO 3 , WO 3 , MoO 3 , or a combination thereof.
18 . The method of claim 11 , further comprising forming a dielectric layer between the seed layer and the substrate or over the barrier layer, the dielectric layer comprising at least one of TiO 2 , SnO 2 , ZnSn, or a combination thereof.
19 . The method of claim 18 , wherein the dielectric layer further comprises a dopant, the dopant comprising at least one of Al, Ga, In, Mg, Ca, Sr, Sb, Bi, Ti, V, Y, Zr, Nb, Hf, Ta, or a combination thereof.
20 . An article comprising:
a substrate; a reflective layer formed above the substrate; and a barrier layer formed above the reflective layer, the barrier layer comprising nickel, chromium, titanium, and aluminum.Join the waitlist — get patent alerts
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