Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same

Abstract

In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu 1-x (Se 1-y-z S y Te z ) x , wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

What is claimed is: 
     
         1 . A method comprising
 providing one or more ingots that collectively contain materials for producing a sputter target having a sputter target composition that comprises Cu 1-x (Se 1-y-z S y Te z ) x , wherein:   the value of x is greater than or equal to approximately 1, inclusive;   the value of y is between approximately 0 and 1, inclusive;   the value of z is between approximately 0 and approximately 1, inclusive; and   
       the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition;
 melting the one or more ingots; 
 pouring the melted materials of the one or more ingots into a mold; and 
 controlling a cooling rate of the materials poured into the mold to control solidification of the materials. 
 
     
     
         2 . The method of  claim 1  wherein the cooling rate is less than approximately 4000 degrees Celsius per minute. 
     
     
         3 . The method of  claim 1  further comprising applying one or more post-casting densification operations to at least one of the one or more ingots.