Semiconductor light emitting device

Abstract

According to one embodiment, a semiconductor light emitting device includes: a conductive layer; a first stacked body; a second stacked body; a first light-transmissive electrode; and a first interconnect electrode. The first stacked body includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is provided between the first semiconductor layer and the conductive layer. The first light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second stacked body includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the conductive layer. The second light emitting layer is provided between the third semiconductor layer and the fourth semiconductor layer. The first interconnect electrode is provided between the second semiconductor layer and the third semiconductor layer.

What is claimed is: 
     
         1 . A semiconductor light emitting device, comprising:
 a conductive layer;   a first stacked body including a first semiconductor layer provided to be separated from the conductive layer in a first direction, a second semiconductor layer provided between the first semiconductor layer and the conductive layer, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer;   a second stacked body including a third semiconductor layer provided between the second semiconductor layer and the conductive layer, a fourth semiconductor layer provided between the third semiconductor layer and the conductive layer, and a second light emitting layer provided between the third semiconductor layer and the fourth semiconductor layer;   a bonding layer provided between the second semiconductor layer and the third semiconductor layer to transmit light emitted by the first light emitting layer and the second light emitting layer;   a first interconnect electrode provided between the second semiconductor layer and the third semiconductor layer; and   a light-transmissive electrode provided between the second semiconductor layer and the bonding layer to have an ohmic contact with the second semiconductor layer and to be electrically connected to the first interconnect electrode, the light-transmissive electrode being configured to transmit the light emitted by the first light emitting layer and the second light emitting layer.   
     
     
         2 . The device according to  claim 1 , wherein the conductive layer has an ohmic contact with the fourth semiconductor layer. 
     
     
         3 . The device according to  claim 1 , further comprising a second interconnect electrode provided between the second semiconductor layer and the third semiconductor layer to have an ohmic contact with the third semiconductor layer. 
     
     
         4 . The device according to  claim 3 , wherein at least a portion of the first interconnect electrode overlaps the second interconnect electrode in the first direction. 
     
     
         5 . The device according to  claim 3 , further comprising:
 a first electrode electrically connected to the first semiconductor layer;   a second electrode electrically connected to the second semiconductor layer; and   a third electrode electrically connected to the third semiconductor layer, the second interconnect electrode having a first interconnect portion,   the light-transmissive electrode having:
 a first transmissive portion provided between the second semiconductor layer and the bonding layer; and 
 a second transmissive portion arranged with the first transmissive portion in a direction perpendicular to the first direction, 
   the first semiconductor layer being disposed between the first electrode and the first light emitting layer,   the second transmissive portion being disposed between the second electrode and the bonding layer,   the first interconnect portion being disposed between the third electrode and the third semiconductor layer.   
     
     
         6 . The device according to  claim 3 , further comprising:
 a first electrode electrically connected to the first semiconductor layer;   a second electrode electrically connected to the second semiconductor layer; and   a third electrode electrically connected to the third semiconductor layer,   the first interconnect electrode having a second interconnect portion,   the second interconnect electrode having a third interconnect portion,   the first semiconductor layer being disposed between the first electrode and the first light emitting layer,   the second interconnect portion being disposed between the second electrode and the bonding layer,   the third interconnect portion being disposed between the third electrode and the third semiconductor layer.   
     
     
         7 . The device according to  claim 5 , wherein the second electrode and the third electrode are provided to be separated from the conductive layer in the direction perpendicular to the first direction. 
     
     
         8 . The device according to  claim 5 , wherein at least a portion of the first electrode overlaps the first interconnect electrode in the first direction. 
     
     
         9 . The device according to  claim 1 , wherein the second light emitting layer is configured to emit light different from the light emitted by the first light emitting layer. 
     
     
         10 . A semiconductor light emitting device, comprising:
 a conductive layer;   a first stacked body including a first semiconductor layer provided to be separated from the conductive layer in a first direction, a second semiconductor layer provided between the first semiconductor layer and the conductive layer, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer;   a second stacked body including a third semiconductor layer provided between the second semiconductor layer and the conductive layer, a fourth semiconductor layer provided between the third semiconductor layer and the conductive layer, and a second light emitting layer provided between the third semiconductor layer and the fourth semiconductor layer;   a first light-transmissive electrode provided between the second semiconductor layer and the third semiconductor layer to have ohmic contacts with the second semiconductor layer and the third semiconductor layer, the first light-transmissive electrode being configured to transmit light emitted by the first light emitting layer and the second light emitting layer;   a first interconnect electrode provided between the second semiconductor layer and the third semiconductor layer to be electrically connected to the first light-transmissive electrode;   a third stacked body including a fifth semiconductor layer provided to be separated from the first semiconductor layer in the first direction, a sixth semiconductor layer provided between the fifth semiconductor layer and the first semiconductor layer, and a third light emitting layer provided between the fifth semiconductor layer and the sixth semiconductor layer, the fifth semiconductor layer having a fifth conductivity type, the sixth semiconductor layer having a sixth conductivity type different from the fifth conductivity type;   a second light-transmissive electrode provided between the first semiconductor layer and the sixth semiconductor layer to have ohmic contacts with the first semiconductor layer and the sixth semiconductor layer, the second light-transmissive electrode being configured to transmit the light emitted by the first light emitting layer, the second light emitting layer, and the third light emitting layer; and   a second interconnect electrode provided between the first semiconductor layer and the sixth semiconductor layer, the second interconnect electrode being electrically connected to the second light-transmissive electrode;   a third electrode electrically connected to the fifth semiconductor layer;   a fourth electrode electrically connected to the first semiconductor layer and the sixth semiconductor layer; and   a fifth electrode electrically connected to the second semiconductor layer and the third semiconductor layer,   the first light-transmissive electrode having:
 a first transmissive portion provided between the second semiconductor layer and the third semiconductor layer; and 
 a second transmissive portion arranged with the first transmissive portion in a direction perpendicular to the first direction, 
   the second light-transmissive electrode having:
 a third transmissive portion provided between the first semiconductor layer and the sixth semiconductor layer; and 
 a fourth transmissive portion arranged with the third transmissive portion in the direction perpendicular to the first direction, 
   the fifth semiconductor layer being disposed between the third electrode and the third light emitting layer,   the fourth transmissive portion being disposed between the fourth electrode and the first semiconductor layer,   the second transmissive portion being disposed between the fifth electrode and the third semiconductor layer.   
     
     
         11 . The device according to  claim 10 , wherein the conductive layer has an ohmic contact with the fourth semiconductor layer. 
     
     
         12 . The device according to  claim 10 , further comprising:
 a first electrode electrically connected to the first semiconductor layer; and   a second electrode electrically connected to the second semiconductor layer and the third semiconductor layer,   the first light-transmissive electrode having:
 a first transmissive portion provided between the second semiconductor layer and the third semiconductor layer; and 
 a second transmissive portion arranged with the first transmissive portion in a direction perpendicular to the first direction, 
   the first semiconductor layer being disposed between the first electrode and the first light emitting layer,   the second transmissive portion being disposed between the second electrode and the third semiconductor layer.   
     
     
         13 . The device according to  claim 12 , wherein the second electrode is provided to be separated from the conductive layer in the direction perpendicular to the first direction. 
     
     
         14 . The device according to  claim 12 , wherein at least a portion of the first electrode overlaps the first interconnect electrode in the first direction. 
     
     
         15 . The device according to  claim 10 , further comprising:
 a first through-electrode piercing the conductive layer, the fourth semiconductor layer, and the second light emitting layer in the first direction to be electrically connected to the second semiconductor layer and the third semiconductor layer;   a first insulating layer provided between the first through-electrode and the fourth semiconductor layer and between the first through-electrode and the second light emitting layer;   a second through-electrode piercing the conductive layer, the second stacked body, the first light-transmissive electrode, the second semiconductor layer, and the first light emitting layer in the first direction to be electrically connected to the first semiconductor layer; and   a second insulating layer provided between the second through-electrode and the second stacked body, between the second through-electrode and the first light-transmissive electrode, between the second through-electrode and the second semiconductor layer, and between the second through-electrode and the first light emitting layer.   
     
     
         16 . The device according to  claim 10 , wherein at least a portion of the first interconnect electrode overlaps the second interconnect electrode in the first direction. 
     
     
         17 . The device according to  claim 10 , wherein the fourth electrode and the fifth electrode are provided to be separated from the conductive layer in the direction perpendicular to the first direction. 
     
     
         18 . The device according to  claim 10 , wherein at least a portion of the third electrode overlaps the second interconnect electrode in the first direction. 
     
     
         19 . The device according to  claim 10 , wherein the second light emitting layer is configured to emit light different from the light emitted by the first light emitting layer.