Method of manufacturing microstructures of metal lines

Abstract

A method of manufacturing a metal line microstructure is provided. Firstly, a substrate is provided. Then, a seed layer is formed on a surface of the substrate. Then, a photoresist layer is formed on a surface of the seed layer, and a photolithography and etching process is performed to form a trench in the photoresist layer, wherein the trench has a specified width. Then, an electroplating process is performed to fill a conductive layer into the trench. Afterwards, the photoresist layer and a portion of the seed layer uncovered by the conductive layer are removed, so that the metal line microstructure is produced.

What is claimed is: 
     
         1 . A method of manufacturing a metal line microstructure, the method comprising steps of:
 (a) providing a substrate;   (b) forming a seed layer on a surface of the substrate;   (c) forming a photoresist layer on a surface of the seed layer, and performing a photolithography and etching process to form a trench in the photoresist layer, wherein the trench has a specified width;   (d) performing an electroplating process to fill a conductive layer into the trench; and   (e) removing the photoresist layer and a portion of the seed layer uncovered by the conductive layer, so that the metal line microstructure is produced.   
     
     
         2 . The method according to  claim 1 , wherein the substrate is a transparent substrate, a flexible substrate or a flexible transparent substrate. 
     
     
         3 . The method according to  claim 1 , wherein a thickness of the seed layer is in a range between 5 nm and 100 nm, and the seed layer is made of metal or metal alloy, wherein the metal or the metal alloy is selected from a Cr/Au metal film, a Ti/Au metal film, a Ti/Cu metal film, a Cu/Cu metal film or a Ti—W/Au metal film. 
     
     
         4 . The method according to  claim 1 , wherein the specified width of the trench is in a range between 1 μm and 20 μm, and the trench has a specified depth in the range between 0.1 μm and 20 μm. 
     
     
         5 . The method according to  claim 4 , wherein the specified width of the trench is in a range between 1 μm and 5 μm, and the specified depth of the trench is in a range between 0.1 μm and 2 μm. 
     
     
         6 . The method according to  claim 4 , wherein the specified width of the trench is smaller than 3 μm. 
     
     
         7 . The method according to  claim 1 , wherein in the step (c), a portion of the seed layer is exposed, wherein in the step (d), the conductive layer is in contact with the exposed portion of the seed layer. 
     
     
         8 . The method according to  claim 1 , wherein the conductive layer is made of copper, gold, silver, aluminum, tungsten, iron, nickel, chromium, titanium, molybdenum, indium, tin, or a combination thereof. 
     
     
         9 . The method according to  claim 1 , wherein a width of the conductive layer is determined according to the specified width of the trench, wherein a thickness of the conductive layer is in a range between 0.1 μm and 2 μm. 
     
     
         10 . A method of manufacturing a metal line microstructure, the method comprising steps of:
 (a) providing a substrate;   (b) forming a seed layer on a surface of the substrate;   (c) forming a photoresist layer on a surface of the seed layer, and performing a photolithography and etching process to form a trench in the photoresist layer, wherein the trench has a specified width;   (d) performing an electroplating process to fill a conductive layer into the trench;   (e) filling an anti-oxidation layer into the trench and forming the anti-oxidation layer on the conductive layer; and   (f) removing the photoresist layer and a portion of the seed layer uncovered by the conductive layer, so that the metal line microstructure is produced.   
     
     
         11 . The method according to  claim 10 , wherein the anti-oxidation layer is an anti-oxidation metal layer, and the anti-oxidation layer contains phenolic resin, photosensitive compounds, organic colored polymer dyes, inorganic colored dyes and solvent. 
     
     
         12 . A method of manufacturing a metal line microstructure, the method comprising steps of:
 (a) providing a substrate;   (b) forming a seed layer on a surface of the substrate;   (c) forming a photoresist layer on a surface of the seed layer, and performing a photolithography and etching process to form a first trench and a second trench in the photoresist layer, wherein the first trench has a first width, the second trench has a second width, and the second width is larger than the first width;   (d) filling a conductive layer into the first trench and the second trench; and   (e) removing the photoresist layer and a portion of the seed layer uncovered by the conductive layer, so that a first metal line microstructure and a second metal line microstructure are produced.   
     
     
         13 . The method according to  claim 12 , wherein the first width of the first trench is in a range between 1 μm and 5 μm, and the second width of the second trench is in a range between 5 μm and 20 μm, wherein a line width of the first metal line microstructure is substantially equal to the first width, and a line width of the second metal line microstructure is substantially equal to the second width.