Magnetoresistive Device and a Writing Method for a Magnetoresistive Device

Abstract

According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.

1 . A writing method for a magnetoresistive device having a first ferromagnetic soft layer and a second ferromagnetic soft layer, the method comprising:
 applying a signal with a magnetization switching frequency which is within either a range of magnetization switching frequencies of the first ferromagnetic soft layer or a range of magnetization switching frequencies of the second ferromagnetic soft layer.   
     
     
         2 . A writing method for a magnetoresistive device having a first oscillating ferromagnetic structure and a second oscillating ferromagnetic structure, the method comprising:
 applying a signal with an operating current amplitude which is within either a range of operating current amplitudes at which oscillations are induced for the first oscillating ferromagnetic structure or a range of operating current amplitudes at which oscillations are induced for the second oscillating ferromagnetic structure.