High efficiency multijunction solar cells

Abstract

Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.

1 - 20 . (canceled) 
     
     
         21 . A photovoltaic cell comprising at least four subcells, wherein,
 at least one of the at least four subcells comprises a base layer formed of Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0.06≦x≦0.24, 0.001≦y≦0.03, and 0.001≦z≦0.02; and   each of the at least four subcells is lattice matched to each of the other subcells.   
     
     
         22 . The photovoltaic cell of  claim 21 , wherein each of the at least four subcells is lattice matched to Ge. 
     
     
         23 . The photovoltaic cell of  claim 21 , wherein the at least one subcell is characterized by a bandgap selected from the group consisting of 0.7 eV to 1.1 eV, 0.8 to 0.9 eV, 0.9 eV to 1.0 eV, 0.9 eV to 1.3 eV, 1.0 eV to 1.1 eV, 1.0 eV to 1.2 eV, 1.1 eV to 1.2 eV, 1.1 eV to 1.4 eV, and 1.2 eV to 1.4 eV. 
     
     
         24 . The photovoltaic cell of  claim 21 , comprising:
 a first subcell having a first base layer formed of a material selected from the group consisting of Ge, SiGe(Sn), and Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0.06≦x≦0.24, 0.001≦y≦0.03, and 0.001≦z≦0.02, and characterized by a band gap of 0.7 eV to 1.1 eV;   a second subcell having a second base layer overlying the first subcell, wherein the second base layer is formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 0.9 eV to 1.3 eV;   a third subcell having a third base layer overlying the second subcell, wherein the third base layer is formed of a material selected from the group consisting of GaInPAs and (Al,In)GaAs, and characterized by a band gap from 1.4 eV to 1.7 eV; and   a fourth subcell having a fourth base layer overlying the third subcell, wherein the fourth base layer is formed of (Al)InGaP and characterized by a band gap from 1.9 eV to 2.2 eV;   wherein the first base layer, the second base layer, or the first base layer and the second base layer are formed of Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0.06≦x≦0.24, 0.001≦y≦0.03, and 0.001≦z≦0.02.   
     
     
         25 . The photovoltaic cell of  claim 24 , wherein the band gap of the first base layer is 0.7 eV to 0.9 eV, the band gap of the second base layer is 1.0 eV to 1.2 eV, the band gap of the third base layer is 1.5 eV to 1.6 eV, and the band gap of the fourth base layer is 1.9 eV to 2.1 eV. 
     
     
         26 . The photovoltaic cell of  claim 21 , comprising:
 a first subcell having a first base layer formed of a material selected from the group consisting of Ge, SiGe(Sn) and Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0.06≦x≦0.24, 0.001≦y≦0.03, and 0.001≦z≦0.02, and characterized by a band gap of 0.7 eV to 1.1 eV;   a second subcell having a second base layer overlying the first subcell, wherein the second base layer is formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 0.9 eV to 1.3 eV;   a third subcell having a third base layer overlying the second subcell, wherein the third base layer is formed of a material selected from the group consisting of GaInPAs, (Al,In)GaAs, and an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 1.2 eV to 1.6 eV;   a fourth subcell having a fourth base layer overlying the third subcell, wherein the fourth base layer is formed of a material selected from the group consisting of GaInPAs and (Al,In)GaAs, and characterized by a band gap from 1.6 eV to 1.9 eV; and   a fifth subcell having a fifth base layer overlying the fourth subcell, wherein the fifth base layer is formed of (Al)InGaP and characterized by a band gap from 1.9 eV to 2.2 eV;   wherein the first base layer, the second base layer, or the first base layer and the second base layer are formed of Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0.06≦x≦0.24, 0.001≦y≦0.03, and 0.001≦z≦0.02.   
     
     
         27 . The photovoltaic cell of  claim 21 , comprising:
 a first subcell having a first base layer formed of a material selected from the group consisting of Ge, SiGe(Sn), and Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0.06≦x≦0.24, 0.001≦y≦0.03, and 0.001≦z≦0.02, and characterized by a band gap of 0.7 eV to 1.1 eV;   a second subcell having a second base layer overlying the first subcell, wherein the second base layer is formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 0.9 eV to 1.3 eV;   a third subcell having a third base layer overlying the second subcell, wherein the third base layer is formed of a material selected from the group consisting of GaInPAs, (Al,In)GaAs, and an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 1.1 eV to 1.5 eV;   a fourth subcell having a fourth base layer overlying the third subcell, wherein the fourth base layer is formed of a material selected from the group consisting of (Al,In)GaAs and (Al)InGa(P)As, and characterized by a band gap from 1.4 eV to 1.7 eV;   a fifth subcell having a fifth base layer overlying the fourth subcell, wherein the fifth base layer is formed of a material selected from the group consisting of (Al)InGaP and Al(In)Ga(P)As, and characterized by a band gap from 1.6 eV to 2.0 eV; and   a sixth subcell having a sixth base layer overlying the fifth subcell, wherein the sixth base layer is formed of (Al)InGaP, and characterized by a band gap from 1.9 eV to 2.3 eV;   wherein the first base layer, the second base layer, or the first base layer and the second base layer are formed of Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0.06≦x≦0.24, 0.001≦y≦0.03, and 0.001≦z≦0.02.   
     
     
         28 . A photovoltaic apparatus comprising at least one photovoltaic cell of  claim 21 . 
     
     
         29 . A photovoltaic cell comprising at least four subcells, wherein,
 at least one of the at least four subcells comprises a base layer formed of Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0≦x≦0.15, 0.015≦y≦0.04, and 0.005≦z≦0.02; and   each of the at least four subcells is lattice matched to each of the other subcells.   
     
     
         30 . The photovoltaic cell of  claim 29 , wherein each of the at least four subcells is lattice matched to GaAs. 
     
     
         31 . The photovoltaic cell of  claim 29 , wherein the at least one subcell is characterized by a bandgap selected from the group consisting of 0.7 eV to 1.1 eV, 0.8 to 0.9 eV, 0.9 eV to 1.0 eV, 0.9 eV to 1.3 eV, 1.0 eV to 1.1 eV, 1.0 eV to 1.2 eV, 1.1 eV to 1.2 eV, 1.1 eV to 1.4 eV, and 1.2 eV to 1.4 eV. 
     
     
         32 . The photovoltaic cell of  claim 29 , comprising:
 a first subcell having a first base layer formed of a material selected from the group consisting of Ge, SiGe(Sn), and Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0≦x≦0.15, 0.015≦y≦0.04, and 0.005≦z≦0.02, and characterized by a band gap of 0.7 eV to 1.1 eV;   a second subcell having a second base layer overlying the first subcell, wherein the second base layer is formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 0.9 eV to 1.3 eV;   a third subcell having a third base layer overlying the second subcell, wherein the third base layer is formed of a material selected from the group consisting of GaInPAs and (Al,In)GaAs, and characterized by a band gap from 1.4 eV to 1.7 eV; and   a fourth subcell having a fourth base layer overlying the third subcell, wherein the fourth base layer is formed of (Al)InGaP and characterized by a band gap from 1.9 eV to 2.2 eV;   wherein the first base layer, the second base layer, or the first base layer and the second base layer are formed of Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0≦x≦0.15, 0.015≦y≦0.04, and 0.005≦z≦0.02.   
     
     
         33 . The photovoltaic cell of  claim 32 , wherein the band gap of the first base layer is 0.7 eV to 0.9 eV, the band gap of the second base layer is 1.0 eV to 1.2 eV, the band gap of the third base layer is 1.5 eV to 1.6 eV, and the band gap of the fourth base layer is 1.9 eV to 2.1 eV. 
     
     
         34 . The photovoltaic cell of  claim 29 , comprising:
 a first subcell having a first base layer formed of a material selected from the group consisting of Ge, SiGe(Sn) and Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0≦x≦0.15, 0.015≦y≦0.04, and 0.005≦z≦0.02, and characterized by a band gap of 0.7 eV to 1.1 eV;   a second subcell having a second base layer overlying the first subcell, wherein the second base layer is formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 0.9 eV to 1.3 eV;   a third subcell having a third base layer overlying the second subcell, wherein the third base layer is formed of a material selected from the group consisting of GaInPAs, (Al,In)GaAs, and an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 1.2 eV to 1.6 eV;   a fourth subcell having a fourth base layer overlying the third subcell, wherein the fourth base layer is formed of a material selected from the group consisting of GaInPAs and (Al,In)GaAs, and characterized by a band gap from 1.6 eV to 1.9 eV; and   a fifth subcell having a fifth base layer overlying the fourth subcell, wherein the fifth base layer is formed of (Al)InGaP and characterized by a band gap from 1.9 eV to 2.2 eV;   wherein the first base layer, the second base layer, or the first base layer and the second base layer are formed of Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0≦x≦0.15, 0.015≦y≦0.04, and 0.005≦z≦0.02.   
     
     
         35 . The photovoltaic cell of  claim 29 , comprising:
 a first subcell having a first base layer formed of a material selected from the group consisting of Ge, SiGe(Sn), and Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0≦x≦0.15, 0.015≦y≦0.04, and 0.005≦z≦0.02, and characterized by a band gap of 0.7 eV to 1.1 eV;   a second subcell having a second base layer overlying the first subcell, wherein the second base layer is formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 0.9 eV to 1.3 eV;   a third subcell having a third base layer overlying the second subcell, wherein the third base layer is formed of a material selected from the group consisting of GaInPAs, (Al,In)GaAs, and an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and characterized by a band gap of 1.1 eV to 1.5 eV;   a fourth subcell having a fourth base layer overlying the third subcell, wherein the fourth base layer is formed of a material selected from the group consisting of (Al,In)GaAs and (Al)InGa(P)As, and characterized by a band gap from 1.4 eV to 1.7 eV;   a fifth subcell having a fifth base layer overlying the fourth subcell, wherein the fifth base layer is formed of a material selected from the group consisting of (Al)InGaP and Al(In)Ga(P)As, and characterized by a band gap from 1.6 eV to 2.0 eV; and   a sixth subcell having a sixth base layer overlying the fifth subcell, wherein the sixth base layer is formed of (Al)InGaP, and characterized by a band gap from 1.9 eV to 2.3 eV;   wherein the first base layer, the second base layer, or the first base layer and the second base layer are formed of Ga 1-x In x N y As 1-y-z Sb z , in which values for x, y and z are 0≦x≦0.15, 0.015≦y≦0.04, and 0.005≦z≦0.02.   
     
     
         36 . A photovoltaic apparatus comprising at least one photovoltaic cell of  claim 29 .