Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition

Abstract

Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

1 . A method for processing a semiconductor substrate comprising:
 decomposing one or more non-metal target materials to form a plasma at a plasma processing region adjacent a semiconductor substrate within a chamber;   generating a first magnetic field extending over a first radial distance to a centerline passing through the center of the semiconductor substrate, the first magnetic field having a first magnetic field magnitude at a region about the centerline;   generating a second magnetic field extending over a second radial distance to the centerline, the second magnetic field having a second magnetic field magnitude substantially the same as the first magnetic field magnitude at the region about the centerline; and   modifying a non-metal film upon the semiconductor substrate.