Semiconductor device

Abstract

In a current-prioritized IGBT, a collector conductive layer is connected to one collector active region included in a collector region by a plurality of contacts. The number of contacts through which the collector conductive layer is connected to the one collector active region is larger than the number of contacts through which the emitter conductive layer is connected to one base active region included in a base region.

1 - 28 . (canceled) 
     
     
         29 . A semiconductor device, comprising:
 a semiconductor substrate having a main surface; and   an insulated gate bipolar transistor formed on said main surface,   said insulated gate bipolar transistor including:   a collector region of a first conductivity type formed on said main surface;   a base region of a first conductivity type formed separately from said collector region on said main surface; and   an emitter region of a second conductivity type formed on said main surface within said base region, said semiconductor device further comprising:   an emitter conductive layer connected to both of said base region and said emitter region of said insulated gate bipolar transistor and constituting an emitter connection portion between both of said base region and said emitter region; and   a collector conductive layer connected to said collector region of said insulated gate bipolar transistor and constituting a collector connection portion with said collector region, wherein   said collector conductive layer is connected to one collector active region included in said collector region by a plurality of contacts,   a number of said contacts of said collector conductive layer to said one collector active region is larger than a number of contacts of said emitter conductive layer to one base active region included in said base region,   a ratio of an area of said emitter connection portion between said base region and said emitter conductive layer to an area in said main surface of said base region is larger than a ratio of an area of said collector connection portion between said collector region and said collector conductive layer to an area in said main surface of said collector region,   said collector connection portion has a divided line contact structure having a plurality of line contact portions separated from one another and arranged in series, and   said emitter connection portion has a line contact structure,   said semiconductor device further comprising an element separation structure formed on said main surface, wherein   said collector region includes a plurality of collector active regions separated from one another by said element separation structure.   
     
     
         30 . The semiconductor device according to  claim 29 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   only said emitter region of a second conductivity type is located directly below a separation portion located between said plurality of line contact portions arranged in series.   
     
     
         31 . The semiconductor device according to  claim 29 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   said base region of a first conductivity type and said emitter region of a second conductivity type are located directly below a separation portion located between said plurality of line contact portions arranged in series, and   an area of said emitter region located directly below said separation portion in said main surface is larger than an area of said base region located directly below said separation portion in said main surface.   
     
     
         32 . The semiconductor device according to  claim 29 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   only said base region of a first conductivity type is located directly below a separation portion located between said plurality of line contact portions arranged in series.   
     
     
         33 . The semiconductor device according to  claim 29 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   said base region of a first conductivity type and said emitter region of a second conductivity type are located directly below a separation portion located between said plurality of line contact portions arranged in series, and   an area of said base region located directly below said separation portion in said main surface is larger than an area of said emitter region located directly below said separation portion in said main surface.   
     
     
         34 . The semiconductor device according to  claim 29 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   said base region of a first conductivity type and said emitter region of a second conductivity type are located directly below a separation portion located between said plurality of line contact portions arranged in series, and   an area of said base region located directly below said separation portion in said main surface is equal to an area of said emitter region located directly below said separation portion in said main surface.   
     
     
         35 . A semiconductor device, comprising:
 a semiconductor substrate having a main surface; and   an insulated gate bipolar transistor formed on said main surface,   said insulated gate bipolar transistor including:   a collector region of a first conductivity type formed on said main surface;   a base region of a first conductivity type formed separately from said collector region on said main surface; and   an emitter region of a second conductivity type formed on said main surface within said base region, said semiconductor device further comprising:   an emitter conductive layer connected to both of said base region and said emitter region of said insulated gate bipolar transistor and constituting an emitter connection portion between both of said base region and said emitter region; and   a collector conductive layer connected to said collector region of said insulated gate bipolar transistor and constituting a collector connection portion with said collector region, wherein   said collector conductive layer is connected to one collector active region included in said collector region by a plurality of contacts, and   a number of said contacts of said collector conductive layer to said one collector active region is larger than a number of contacts of said emitter conductive layer to one base active region included in said base region,   a ratio of an area of said emitter connection portion between said base region and said emitter conductive layer to an area in said main surface of said base region is larger than a ratio of an area of said collector connection portion between said collector region and said collector conductive layer to an area in said main surface of said collector region,   said collector connection portion has a divided line contact structure having a plurality of line contact portions separated from one another and arranged in series, and   said emitter connection portion has a line contact structure,   said semiconductor device further comprising an impurity region of a second conductivity type formed on said main surface, wherein   said collector region includes a plurality of collector active regions separated from one another by said impurity region.   
     
     
         36 . The semiconductor device according to  claim 35 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   only said emitter region of a second conductivity type is located directly below a separation portion located between said plurality of line contact portions arranged in series.   
     
     
         37 . The semiconductor device according to  claim 35 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   said base region of a first conductivity type and said emitter region of a second conductivity type are located directly below a separation portion located between said plurality of line contact portions arranged in series, and   an area of said emitter region located directly below said separation portion in said main surface is larger than an area of said base region located directly below said separation portion in said main surface.   
     
     
         38 . The semiconductor device according to  claim 35 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   only said base region of a first conductivity type is located directly below a separation portion located between said plurality of line contact portions arranged in series.   
     
     
         39 . The semiconductor device according to  claim 35 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   said base region of a first conductivity type and said emitter region of a second conductivity type are located directly below a separation portion located between said plurality of line contact portions arranged in series, and   an area of said base region located directly below said separation portion in said main surface is larger than an area of said emitter region located directly below said separation portion in said main surface.   
     
     
         40 . The semiconductor device according to  claim 35 , wherein
 said emitter connection portion has a line contact structure, and   said line contact structure of said emitter connection portion has a plurality of line contact portions separated from one another and arranged in series, and   said base region of a first conductivity type and said emitter region of a second conductivity type are located directly below a separation portion located between said plurality of line contact portions arranged in series, and   an area of said base region located directly below said separation portion in said main surface is equal to an area of said emitter region located directly below said separation portion in said main surface.