US2015380572A1PendingUtilityA1

Method of providing chloride treatment for a photovoltaic device and a chloride treated photovoltaic device

Assignee: FIRST SOLAR INCPriority: May 21, 2012Filed: Sep 4, 2015Published: Dec 31, 2015
Est. expiryMay 21, 2032(~5.8 yrs left)· nominal 20-yr term from priority
H10F 77/219H10F 77/48H10F 71/131H10F 71/128H10F 71/125H10F 10/162H10F 77/123H01L 31/022441H01L 31/0296H01L 31/056Y02P70/50Y02E10/543Y02E10/52
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Claims

Abstract

A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device.

Claims

exact text as granted — not AI-modified
1 - 21 . (canceled) 
     
     
         22 . A photovoltaic device comprising:
 a treated cadmium telluride layer, the treated cadmium telluride layer being treated with a chloride compound comprising one or more elements selected from the group consisting of an element from Groups 1-11, zinc, mercury and copernicium.   
     
     
         23 . The device of  claim 22 , further comprising:
 a semiconductor reflector layer over the cadmium telluride layer; and   a back contact layer over the semiconductor reflector layer.   
     
     
         24 . The device of  claim 22 , wherein the chloride compound comprises manganese chloride. 
     
     
         25 . The device of  claim 22 , wherein the chloride compound comprises magnesium chloride. 
     
     
         26 . The device of  claim 23 , wherein the semiconductor reflector layer comprises zinc telluride.

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