US2015380572A1PendingUtilityA1
Method of providing chloride treatment for a photovoltaic device and a chloride treated photovoltaic device
Est. expiryMay 21, 2032(~5.8 yrs left)· nominal 20-yr term from priority
H10F 77/219H10F 77/48H10F 71/131H10F 71/128H10F 71/125H10F 10/162H10F 77/123H01L 31/022441H01L 31/0296H01L 31/056Y02P70/50Y02E10/543Y02E10/52
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Claims
Abstract
A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device.
Claims
exact text as granted — not AI-modified1 - 21 . (canceled)
22 . A photovoltaic device comprising:
a treated cadmium telluride layer, the treated cadmium telluride layer being treated with a chloride compound comprising one or more elements selected from the group consisting of an element from Groups 1-11, zinc, mercury and copernicium.
23 . The device of claim 22 , further comprising:
a semiconductor reflector layer over the cadmium telluride layer; and a back contact layer over the semiconductor reflector layer.
24 . The device of claim 22 , wherein the chloride compound comprises manganese chloride.
25 . The device of claim 22 , wherein the chloride compound comprises magnesium chloride.
26 . The device of claim 23 , wherein the semiconductor reflector layer comprises zinc telluride.Join the waitlist — get patent alerts
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