Photovoltaic devices including nitrogen-containing metal contact

Abstract

A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

1 - 31 . (canceled) 
     
     
         32 . A method of manufacturing a photovoltaic cell comprising:
 placing a first semiconductor layer on a substrate; and   depositing a metal layer on the first semiconductor layer in the presence of nitrogen to form a nitrogen-containing metal layer, the nitrogen-containing metal layer including an aluminum nitride, a molybdenum nitride, a nickel nitride, a titanium nitride, a tungsten nitride, a selenium nitride, a tantalum nitride, or a vanadium nitride in contact with the semiconductor layer.   
     
     
         33 . The method of  claim 32  further comprising placing a second semiconductor layer over the first semiconductor layer. 
     
     
         34 . The method of  claim 32  further comprising depositing a transparent conductive layer on the substrate. 
     
     
         35 . The method of  claim 34  wherein the transparent conductive layer comprises a transparent conductive oxide. 
     
     
         36 . The method of  claim 35  wherein the transparent conductive oxide comprises tin oxide. 
     
     
         37 . The method of  claim 34  further comprising placing a capping layer between the transparent conductive layer and the first semiconductor layer includes depositing a thin layer on the transparent conductive layer. 
     
     
         38 . The method of  claim 32  wherein the first semiconductor layer comprises CdS. 
     
     
         39 . The method  claim 32  wherein the metal layer includes a stoichiometric nitride. 
     
     
         40 . The method  claim 32  wherein the metal layer includes a non-stoichiometric nitride. 
     
     
         41 . The method of  claim 32  further comprising a chromium layer and an aluminum layer between the chromium layer and the nitrogen-containing metal layer. 
     
     
         42 . The method of  claim 41  wherein the nitrogen-containing metal layer includes a chromium nitride. 
     
     
         43 . The method of  claim 41  wherein the nitrogen-containing metal layer includes a molybdenum nitride. 
     
     
         44 . The method of  claim 33  wherein the second semiconductor layer comprises CdTe.