Patterning devices using fluorinated compounds

Abstract

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

1 - 21 . (canceled) 
     
     
         22 . A spatially patterned structured produced according to a method comprising:
 forming a layer of a material on at least a portion of a substructure of said spatially patterned structure;   forming a barrier layer of a fluorinated material on said layer of material to provide an intermediate structure; and   exposing said intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of said intermediate structure, wherein said barrier layer substantially protects said layer of said material from chemical and structural changes during said exposing.   
     
     
         23 . A diode, comprising: a substructure; a thin film of an n-channel organic semiconductor formed on said substructure; a thin film of a p-channel organic semiconductor formed on said substructure in a position laterally displaced from said thin film of said n-type organic semiconductor so as to form a p-n heterojunction in a lateral arrangement on said substructure. 
     
     
         24 . A diode according to  claim 23 , further comprising: a first electrode in electrical contact with said thin film of said n-channel organic semiconductor at a position displaced away from said p-n heterojunction; and a second electrode in electrical contact with said thin film of said p-channel organic semiconductor at a position displaced away from said p-n heterojunction. 
     
     
         25 . A diode according to  claim 24 , further comprising a third electrode arranged proximate said p-n heterojunction, wherein said third electrode is suitable to control an electric field within region proximate said p-n heterojunction. 
     
     
         26 . A diode according to  claim 23 , wherein said substructure comprises a substrate. 
     
     
         27 . A diode according to  claim 26 , wherein said substrate is a flexible substrate.