Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Abstract

Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

1 . A chemical-mechanical polishing (CMP) composition comprising:
 (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6,   (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid,   (C) water   (D) optionally one or more further constituents,   wherein the pH of the composition is in the range of ranges from 2 to 6.   
     
     
         2 . The chemical-mechanical polishing (CMP) composition according to  claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions or modified with sulfonic acid. 
     
     
         3 . The chemical-mechanical polishing (CMP) composition according to  claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions selected from the group consisting of aluminate, stannate, zincate, and plumbate. 
     
     
         4 . The chemical-mechanical polishing (CMP) composition according to  claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with aluminate. 
     
     
         5 . The chemical-mechanical polishing (CMP) composition according to  claim 1 , wherein
 the total amount of (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 is in the range of from 0,1 wt % to 30 wt %, based on the total weight of the chemical-mechanical polishing (CMP) composition   and/or   the total amount of (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid is in the range of from 0.01 to 3 wt % based on the total weight of the chemical-mechanical polishing (CMP) composition.   
     
     
         6 . A chemical-mechanical polishing (CMP) composition according to  claim 1 , comprising one or more further constituents as component (D),
 wherein the one or at least one of or all of the further constituents of component (D) are selected from the group consisting of oxidizing agents, abrasive materials different from surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6, stabilizers, surfactants, friction reducing agents, and buffer substances.   
     
     
         7 . A method for chemical-mechanical polishing comprising contacting a material with a chemical-mechanical polishing (CMP) composition that comprises N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid. 
     
     
         8 . The method according to  claim 7 , wherein the CMP composition comprises an additive for increasing the removal rate of a III-V material. 
     
     
         9 . The method according to  claim 8 , wherein the III-V material is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlAs, AlN, InP, InAs, InSb, InGaAs, InAlAs, AlGaAs, GaAlN, GaInN, InGaAlAs, InGaAsP, InGaP, AlInP, GaAlSb, GaInSb, GaAlAsSb, and GaInAsSb. 
     
     
         10 . A process for the manufacture of semiconductor devices comprising chemical-mechanical polishing of a substrate or layer in the presence of a chemical-mechanical polishing (CMP) composition as defined in  claim 1 . 
     
     
         11 . The process according to  claim 10 , wherein the substrate or layer contains one or more III-V materials. 
     
     
         12 . The process according to  claim 10 , wherein at least one of the III-V materials is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlAs, AlN, InP, InAs, InSb, InGaAs, InAlAs, AlGaAs, GaAlN, GaInN, InGaAlAs, InGaAsP, InGaP, AlInP, GaAlSb, GaInSb, GaAlAsSb, and GaInAsSb. 
     
     
         13 . A method for polishing a substrate or layer containing one or more III-V materials comprising contacting it with the CMP composition of  claim 1 . 
     
     
         14 . The method according to  claim 13 , wherein at least one of the III-V materials is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlAs, AlN, InP, InAs, InSb, InGaAs, InAlAs, AlGaAs, GaAlN, GaInN, InGaAlAs, InGaAsP, InGaP, AlInP, GaAlSb, GaInSb, GaAlAsSb, and GaInAsSb. 
     
     
         15 . The method according to  claim 7 , wherein said CMP composition comprises surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6.