System and apparatus to facilitate physical vapor deposition to modify non-metal films on semiconductor substrates

Abstract

Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.

1 . A plasma implementation system comprising:
 a chamber including an outer concentric region and an inner concentric region each positioned concentrically relative to a centerline passing through a first portion of the chamber and a second portion of the chamber, the chamber configured to facilitate plasma processing in a plasma processing region bounded by the inner concentric region to modify a semiconductor layer of a non-metal material located in the second portion of the chamber;   a center magnetic field generator positioned at the first portion of the chamber and configured to confront the semiconductor layer along the centerline;   a first set of magnetic field generators disposed in the outer region about the centerline; and   a second set of magnetic field generators disposed in the inner region about the centerline,   wherein subsets of the first set of magnetic field generators and the second set of magnetic field generators are disposed at different distances from the center magnetic field generator.