Ac white led device

Abstract

An Alternate Current (AC) white Light-Emitting Diode (LED) device is provided, which belongs to the technical field of white LED manufacturing. The problem to be solved by the present invention is to low-costly overcome a series of deficiencies such as the stroboflash of an AC driven LED, and the heat dissipation difficulty caused by an integrated packaging of multiple LEDs. A white LED unit includes an LED chip and a light emitting material that can emit light when being excited by the LED chip. The luminous lifetime of the light emitting material is 1˜100 ms. The LED chip only comprises one PN junction. The light emitted by the LED chip is mixed with the light emitted by the light emitting material to form white light. The white LED unit is driven by AC with a frequency not more than 100 Hz. The white LED device of prevent invention uses the single PN junction chip, rather than the prior integrated packaged AC multi-LED chip.

1 - 10 . (canceled) 
     
     
         11 . A white Light-Emitting Diode (LED) device, the LED device comprising:
 a circuit comprising two or more diode,   wherein each diode in the circuit is a white LED comprising a LED chip and a light emitting material capable of emitting light when excited by the LED chip, wherein the LED chip is driven directly by Alternating Current (AC) with a frequency of not more than 100 Hz, and wherein a luminous lifetime of the light emitting material is 1 to 100 ms.   
     
     
         12 . The white LED device of  claim 11 , wherein the light emitting material is one or a combination of CaS:Eu 2+ , SrAl 2 O 4 :Eu 2+ , SrAl 2 O 4 :Eu 2+ , Sr 4 Al 14 O 25 :Eu 2+ , Sr 4 Al 14 O 25 :Eu 2+ , Y 2 O 2 S:Eu 3+ , Zn 2 P 2 O 7 :Tm 3+ , Sr 2 P 2 O 7 :Eu 2+ , Zn 3 (PO 4 ) 2 :Mn 2+ , Y 2 O 2 S:Mg 2+ , SrMg 2 (PO 4 ) 2 :Eu 2+ , CaAl 2 O 4 :Dy 3+ , Ca 4 O(PO 4 ) 2 :Eu 2+ , B 3+ , Ga 3+ , Gd 3+ , Y 3+ , Dy 3+  and Ti 3+ . 
     
     
         13 . The white LED device of  claim 11 , wherein the circuit is a unidirectional series circuit. 
     
     
         14 . The white LED device of  claim 11 , wherein the circuit is a reverse parallel circuit. 
     
     
         15 . The white LED device of  claim 11 , wherein the circuit is a bridge rectifier circuit. 
     
     
         16 . The white LED device according to  claim 11 , wherein the LED chip is driven by Alternating Current (AC) with a frequency of 50 to 60 Hz. 
     
     
         17 . The white LED device according to  claim 11 , wherein the luminous lifetime of the light emitting material is 10 to 30 ms. 
     
     
         18 . The white LED device according to  claim 11 , wherein the light emitted by the LED chip is ultraviolet light in a range of 200 nm to 380 nm or visible light in a range of 380 nm to 780 nm. 
     
     
         19 . The white LED device according to  claim 11 , further comprising a light guide covering layer. 
     
     
         20 . The white LED device according to  claim 19 , wherein the light guide covering layer is doped with particles of non-light-emitting material with a diameter less than 5 μm. 
     
     
         21 . The white LED device according to  claim 11 , wherein the LED chip comprises a single light emitting PN junction.