Semiconductor device and manufacturing method thereof

Abstract

A conventional semiconductor device used for a power supply circuit such as a DC/DC converter has problems of heat dissipation and downsizing, in particular has the problems of heat dissipation and others in the event of downsizing. A semiconductor device has a structure formed by covering a principal surface of a semiconductor chip having the principal surface and a plurality of MIS type FETs formed over the principal surface with a plurality of metal plate wires having pectinate shapes; allocating the pectinate parts alternately in a planar view over the principal surface; and further electrically coupling the plural metal plate wires to a plurality of terminals.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device including the processes of:
 preparing a semiconductor chip in which first and second power MISFETs, each of which has source pads and drain pads of strip-shapes or rectangular shapes in a planar view, are formed; and   mounting a first metal plate wire, a second metal plate wire, and a third metal plate wire over said source pads and said drain pads in said semiconductor chip and coupling said first metal plate wire, said second metal plate wire, and said third metal plate wire to said source pads, said drain pads, and a plurality of terminals.   
     
     
         2 . The method for manufacturing a semiconductor device according to  claim 1 , wherein said source pads and said drain pads are coupled to said first metal plate wire, said second metal plate wire, and said third metal plate wire through solder bumps. 
     
     
         3 . The method for manufacturing a semiconductor device according to  claim 1 , wherein said plural terminals are an input terminal, an output terminal, and a ground terminal.