Array-type light-emitting device and apparatus thereof

Abstract

The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

1 . A semiconductor light-emitting device comprising:
 a growth substrate;   a plurality of light-emitting cells arranged on the growth substrate and defining a light-emitting region, each light-emitting cell of the plurality of light-emitting cells including a top surface, a side surface, a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, an active layer disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer to emit a blue light;   an electrical circuit layer having a first end point directly contacted to one cell and a second end point directly contacted to another one cell at different elevations; and   a wavelength conversion structure disposed on the light-emitting region to generate light, and including a red wavelength conversion layer, and a green wavelength conversion layer and separated from the red wavelength conversion layer;   wherein the light comprises a red light, a green light, and a yellow light.   
     
     
         2 . The semiconductor light-emitting device of  claim 1 , wherein the light-emitting region has a portion not covered by the wavelength conversion structure. 
     
     
         3 . The semiconductor light-emitting device of  claim 1 , wherein the wavelength conversion structure includes a fluorescent powder or a semiconductor material. 
     
     
         4 . The semiconductor light-emitting device of  claim 1 , wherein the first-conductivity-type semiconductor layer of the one light-emitting cell of the plurality of light-emitting cells and the second-conductivity-type semiconductor layer of the another light-emitting cell of the plurality of light-emitting cells are electrically connected to an AC power source. 
     
     
         5 . The semiconductor light-emitting device of  claim 1 , wherein the first-conductivity-type semiconductor layers of the plurality of light-emitting cells are commonly formed on the growth substrate. 
     
     
         6 . The semiconductor light-emitting device of  claim 1 , wherein the red light, the green light, and the yellow light are not emitted at the same time. 
     
     
         7 . The semiconductor light-emitting device of  claim 1 , wherein the plurality of light-emitting cells are divided into a first group including one or more first cells on which the red wavelength conversion layer is formed, and a second group including one or more second cells on which the green wavelength conversion layer is formed. 
     
     
         8 . The semiconductor light-emitting device of  claim 1 , wherein the wavelength conversion structure is divided into a plurality of wavelength conversion layers that are separated from each other, each wavelength conversion layer of the plurality of wavelength conversion layers is disposed so as to cover only one light-emitting cell of the plurality of light-emitting cells. 
     
     
         9 . The semiconductor light-emitting device of  claim 1 , further comprising an insulating layer, on which the electrical circuit layer is disposed, disposed on the side surface of the one light-emitting cell of the plurality of light-emitting cells. 
     
     
         10 . The semiconductor light-emitting device of  claim 1 , further comprising a first electrode and a second electrode, which are configured to receive an external electric signal of applying to the semiconductor light-emitting device, disposed on different light-emitting cells of the plurality of light-emitting cells. 
     
     
         11 . The semiconductor light-emitting device of  claim 10 , wherein the external electrical signal received by the first and second electrodes causes all light-emitting cells of the plurality of light-emitting cells to emit light. 
     
     
         12 . The semiconductor light-emitting device of  claim 1 , wherein the blue light has a wavelength of 440-480 nm. 
     
     
         13 . The semiconductor light-emitting device of  claim 1 , wherein the electrical circuit layer is disposed on the red wavelength conversion layer or the green wavelength conversion layer. 
     
     
         14 . The semiconductor light-emitting device of  claim 1 , further comprising an insulating layer covering the red wavelength conversion layer or the green wavelength conversion layer. 
     
     
         15 . The semiconductor light-emitting device of  claim 1 , further comprising a first electrode formed on the top surface of the one light-emitting cell of the plurality of light-emitting cells and surrounded by the red wavelength conversion layer or the green wavelength conversion layer. 
     
     
         16 . The semiconductor light-emitting device of  claim 15 , wherein the first electrode has an elevation higher than that of the red wavelength conversion layer or the green wavelength conversion layer. 
     
     
         17 . A semiconductor light-emitting device comprising:
 a substrate;   a plurality of light-emitting cells arranged on the substrate, each light-emitting cell of the plurality of light-emitting cells including a top surface, a side surface, a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer to emit a blue light;   an electrical circuit layer having a first end point directly contacted to one cell and a second end point directly contacted to another one cell at different elevations; and   a wavelength conversion structure configured to generate light and comprising a first wavelength conversion layer and a second wavelength conversion layer physically separated from each other; wherein the first wavelength conversion layer disposed on a first portion of the top surface of the one of the light-emitting cells; and   an electrode formed on a second portion of the top surface of the one of the light-emitting cells;   wherein the light comprises a red light, green light, and a yellow light.   
     
     
         18 . The semiconductor light-emitting device of  claim 17 , wherein the wavelength conversion structure includes a first wavelength layer formed on the one light-emitting cell to generate a first spectrum, and a second wavelength layer formed on the another light-emitting cell to generate a second wavelength different from the first wavelength. 
     
     
         19 . The semiconductor light-emitting device of  claim 17 , wherein the electrical circuit layer is disposed on the wavelength conversion structure. 
     
     
         20 . The semiconductor light-emitting device of  claim 17 , further comprising an insulating layer covering the wavelength conversion layer.